tag: Read Disturbance

Experimental Characterization Results and State-of-the-Art Device-Level Studies of DRAM Read Disturbance
By Technical Paper Link - 25 Mar, 2025 - Comments: 0

A new technical paper titled "Revisiting DRAM Read Disturbance: Identifying Inconsistencies Between Experimental Characterization and Device-Level Studies" was published by researchers at ETH Zurich. Abstract "Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM ro... » read more

Solution To Read Disturbance For Current And Future DRAM Chips at Low Area, Performance And Energy Costs (ETH Zurich et al.)
By Technical Paper Link - 07 Mar, 2025 - Comments: 0

A new technical paper titled "Chronus: Understanding and Securing the Cutting-Edge Industry Solutions to DRAM Read Disturbance" was published by researchers at ETH Zurich, TOBB, and University of Sharjah. Abstract "We 1) present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Count... » read more

Temporal Variation in DRAM Read Disturbance in DDR4 and HBM2 (ETH Zurich, Rutgers)
By Technical Paper Link - 19 Feb, 2025 - Comments: 0

A new technical paper titled "Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance" was published by researchers at ETH Zurich and Rutgers University. Abstract "Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold... » read more

DRAM Chip Characterization Study of Spatial Variation of Read Disturbance and Future Solutions (ETH Zurich)
By Technical Paper Link - 15 Mar, 2024 - Comments: 0

A new technical paper titled "Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions" was published by researchers at ETH Zurich. Abstract: "Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. Row... » read more

RowPress: Read-Disturb Phenomenon In DDR4 DRAM Chips
By Technical Paper Link - 15 Jul, 2023 - Comments: 0

A technical paper titled "RowPress: Amplifying Read Disturbance in Modern DRAM Chips" was published by researchers at ETH Zürich. Abstract: "Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly opening and clo... » read more

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