Nanoscale (5nm) Ferroelectric Semiconductor (University of Michigan)

A new technical paper titled "Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy" was published by researchers at University of Michigan, with DARPA funding. "Ferroelectric semiconductors stand out from others because they can sustain an electrical polarization, like the electric version of magnetism. But unlike a fridge magn... » read more