Visualization of Photoexcited Charges Moving Across the Interface of Si/Ge


A technical paper titled "Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy" was published by researchers at UC Santa Barbara and UCLA. "In this work, we apply scanning ultrafast electron microscopy to provide a holistic view of photoexcited charge dynamics in a Si/Ge heterojunction. We find that the built-in potential and the band off... » read more