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Synchrotron S-ray Diffraction-based Non-destructive Nanoscale Mapping of Si/SiGe Nanosheets for GAA structures


New research paper titled "Mapping of the mechanical response in Si/SiGe nanosheet device geometries" from researchers at IBM T.J. Watson Research Center and Brookhaven National Laboratory. Sponsored by U.S. DOE. Abstract "The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibilit... » read more

Overview of Silicon, Silicon Carbide and Gallium Nitride for Power Electronics


New open access research paper "Review and Evaluation of Power Devices and Semiconductor Materials Based on Si, SiC, and Ga-N" from various institutions in India mostly. Abstract "There is no reservation that semiconductor equipment distorted the world despite the fact of doing the practical experiments and also in research field. Researchers will communicate the process of semiconducto... » read more

Materials and Device Simulations for Silicon Qubit Design and Optimization


Abstract: "Silicon-based microelectronics technology is extremely mature, yet this profoundly important material is now also poised to become a foundation for quantum information processing technologies. In this article, we review the properties of silicon that have made it the material of choice for semiconductor-based qubits with an emphasis on the role that modeling and simulation have play... » read more