Gallium nitride (GaN), a binary III-V bandgap material, has been used to make LEDs for the last several years. GaN has also been touted as the next big thing in power electronics and RF. To some degree, GaN has made inroads in RF, especially in high-end defense and aerospace applications.
But the technology is having mixed success in power electronics. Today’s GaN-on-silicon devices are l...
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