TFETs: Design and Operation, Including Material Selection and Simulation Methods


A new technical paper titled "Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review" was published by researchers at University of Chicago and Argonne National Lab. Abstract "Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transi... » read more