Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs."
"This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF...
» read more
