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Study Of Bondable Laser Release Material Using 355nm Energy To Facilitate RDL-First And Die-First Fan-Out Wafer-Level Packaging (FOWLP)
By Brewer Science - 18 May, 2022 - Comments: 0

A thorough evaluation on selecting a bondable laser release material for redistribution layer (RDL)-first and die-first fan-out wafer-level packaging (FOWLP) is presented in this article. Four laser release materials were identified based on their absorption coefficient at 355 nm. In addition, all four of these materials possess thermal stability above 350 °C and pull-off adhesion on a Ti/Cu l... » read more

A Single-Layer Mechanical Debonding Adhesive For Advanced Wafer-Level Packaging
By Brewer Science - 20 Apr, 2022 - Comments: 0

Better performance and lower cost are always key trends being pursued in the semiconductor industry. Moore's law has provided a very well-defined relationship between performance and cost and the semiconductor industry has followed this law for the past several decades with no issue. However, it became more and more difficult for foundries and integrated device manufacturers (IDMs) to scale to ... » read more

A Novel Multifunctional Single-Layer Adhesive Used For Both Temporary Bonding And Mechanical Debonding in Wafer-Level Packaging Applications
By Brewer Science - 15 Dec, 2021 - Comments: 0

Temporary bonding (TB) and debonding (DB) of wafers have been widely developed and applied over the last decade in various wafer-level packaging technologies, such as package-on-package (PoP), fan-out integration, and 2.5D and 3D integration using through-silicon vias (TSVs). The materials used to achieve TB and DB are extremely critical and the industry's current best practice is the use of tw... » read more

Chemistry Working For Lithography: The Marangoni-Effect-Based Single Layer For Enhanced Planarization
By Brewer Science - 17 Nov, 2021 - Comments: 0

In the field of semiconductor manufacturing, there is still a continuous search for techniques to improve the Critical Dimension Uniformity (CDU) across the wafer. CDU improvement and general defectiveness reduction increase the industrial yield and guarantee high reliability standards. In the KrF Dual-Damascene module integration, at a lithographic level, deep trench planarization is mandatory... » read more

Are Surfaces Of Silicon Hardmasks Adaptive?
By Brewer Science - 15 Sep, 2021 - Comments: 0

Silicon hardmask (Si-HM) materials used in lithography processes play a critical role in transferring patterns to desired substrates. In addition, these materials allow for the tuning of optical properties such as reflectivity and optical distribution for better lithography. Si-HM materials also need to possess good compatibility with photoresists before and after optical exposure, during which... » read more

Marangoni Effect-Based Under-Layer For A Dual Damascene Via-First Approach
By Brewer Science - 19 Aug, 2021 - Comments: 0

One of the main challenges of a Dual Damascene (DD) via-first process is the control of the Critical Dimensions (CDs) in the lithography of the trenches. The PhotoResist (PhR) thickness presents variations from the via arrays to the open areas, which cause the variation of CDs: the swing effect. The planarization of a DD via-first process is reported. A dual-layer solution is used to demonst... » read more

Underlayer Optimization Method For EUV Lithography
By Brewer Science - 21 Jul, 2021 - Comments: 0

Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more

High-Temperature-Stable, Spin-On Carbon Materials For High-Aspect-Ratio Gap-Fill Applications
By Brewer Science - 16 Jun, 2021 - Comments: 0

Brewer Science, Inc. has developed a class of novel, high-temperature-stable spin-on carbon (SOC)-based materials with excellent processability. These SOCs are cured under mild conditions and have flow properties that enable the fill of high-aspect-ratio vias in a void-free manner. Moreover, this new class of SOCs has remarkable thermal stability and can survive temperatures of up to 550°C wit... » read more

Improvement Of EUV Si Hardmask Performance Through Wet Chemistry Functionalization
By Brewer Science - 20 May, 2021 - Comments: 0

In EUV lithography, spin-on silicon hardmasks have been widely used not only as etch transfer layers, but also as assist layers to enhance the lithographic performance of resist. In this study, we demonstrate a novel approach to functionalize spin-on silicon hardmasks by hybridizing them with functional groups through a sol-gel approach. By varying the concentration and type of the functional g... » read more

Defect Mitigation And Characterization In Silicon Hardmask Materials
By Brewer Science - 17 Mar, 2021 - Comments: 0

From SPIE Digital Library: In this study, metal contaminants, liquid particle count and on-wafer defects of Si- HMs and filtration removal rates are monitored to determine the effect of filter type, pore size, media morphology, and cleanliness on filtration performance. 5-nm PTFE NTD2 filter having proprietary surface treatment used in this study shows lowest defect count. Authors: Vineet... » read more

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