中文 English

Underlayer Optimization Method For EUV Lithography

How polar and dispersive components of surface energy can be used to achieve the best lithography performance.

popularity

Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern collapse at high aspect ratios whereas at the same time the impact of interfacial effects, such as intermixing, on the lithography performance must be minimized. A fine balance must be found between several chemical interactions, which is a complex exercise with many unknown parameters. In this paper we present how the polar and dispersive components of the surface energy can be used to optimize EUV underlayers in order to achieve the best lithography performance.

Authors:

  • from imec (Belgium) — Pieter Vanelderen, Nadia Vandenbroeck, Danilo De Simone, Geert Vandenberghe
  • from Brewer Science, Inc. (United States) — Yichen Liang, Veerle Van Driessche, Douglas Guerrero, Andrea Chacko,

Click here to read full abstract and access the article page on SPIE’s website.



Leave a Reply


(Note: This name will be displayed publicly)