Realization Of Sub-30-Pitch EUV Lithography Through The Application Of Functional Spin-On Glass

Photoresist metrics such as resolution, roughness, CD uniformity, and overall process window are often aimed to realize the full potential of EUV lithography. From the view of the materials supplier, improvements over the aforementioned metrics can be achieved by optimizing the functional materials used under the resist. The underlayers can significantly enhance the resist performance by provid... » read more

Chemistry Working For Lithography: The Marangoni-Effect-Based Single Layer For Enhanced Planarization

In the field of semiconductor manufacturing, there is still a continuous search for techniques to improve the Critical Dimension Uniformity (CDU) across the wafer. CDU improvement and general defectiveness reduction increase the industrial yield and guarantee high reliability standards. In the KrF Dual-Damascene module integration, at a lithographic level, deep trench planarization is mandatory... » read more

Marangoni Effect-Based Under-Layer For A Dual Damascene Via-First Approach

One of the main challenges of a Dual Damascene (DD) via-first process is the control of the Critical Dimensions (CDs) in the lithography of the trenches. The PhotoResist (PhR) thickness presents variations from the via arrays to the open areas, which cause the variation of CDs: the swing effect. The planarization of a DD via-first process is reported. A dual-layer solution is used to demonst... » read more

Underlayer Optimization Method For EUV Lithography

Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more