Study of EUV Nanostructures Using AFM With High-Aspect Ratio Tip (Purdue, Intel, Bruker)


A new technical paper, "Characterizing tip-sample interaction dynamics on extreme ultraviolet nanostructures using atomic force microscopy with a high-aspect ratio tip," was released by researchers at Purdue University, Intel Corporation and Bruker Corporation. Abstract "Accurate measurements of the nanometer scale geometry of extreme ultraviolet (EUV) lithography photoresist patterns are... » read more

Considerations For The Introduction of New EUV Resist Materials To A Fab (KU Leuven, imec)


A new technical paper titled "Process and materials compatibility considerations for introducing novel extreme ultraviolet resists in a fab: a guide for academia and entrepreneurs" was published by researchers at KU Leuven and imec. Abstract Excerpt "Despite having novel ideas, most researchers struggle to introduce their resist into an advanced fab, i.e., a facility where all the industr... » read more

Blend Strategy To Improve Edge Resistance Capability And Thickness Of EUV-Fabricated Nanopatterns (National Tsing Hua Univ.)


A new technical paper titled "Enhanced Edge Etching Resistance and EUV Lithographic Performance of a Tin-Oxide Photoresist via a Blend Strategy" was published by researchers at National Tsing Hua University. Abstract "Enhancing the edge resistance capability of extensively studied metal carboxylate clusters as extreme ultraviolet (EUV) photoresists is a formidable and unsolved task. This wo... » read more

Reaction Mechanisms in a Chemically Amplified EUV Photoresist (imec, KU Leuven)


A new technical paper titled "Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach" was published by researchers at imec and KU Leuven. "Our combined experimental and theoretical approach shows that EUV photoemission can simultaneously resolve chemical dynamics and the production of primary and secondary electrons,... » read more

Scalable Approach For Fabricating Sub-10nm Nanogaps


A new technical paper titled "A progressive wafer scale approach for Sub-10 nm nanogap structures" was published by researchers at Seoul National University, Chung-Ang University, Mohammed VI Polytechnic University and Ulsan National Institute of Science and Technology. "We have advanced the atomic layer lithography method into an efficient, scalable approach for fabricating sub-10 nm nanoga... » read more

Indium Nitrate As An Advanced Metal-Oxide Resist for EUV Lithography


A new technical paper titled "Sensitivity and contrast of indium nitrate hydrate resist evaluated by low-energy electron beam and extreme ultraviolet exposure" was published by researchers at UT Dallas. "We evaluate the sensitivity and contrast of indium nitrate resists by analyzing dose curves collected using electron beam lithography (EBL) and extreme ultraviolet (EUV) exposure, " states t... » read more

Research Bits: Nov. 19


Starchy nanocomposite films Researchers from Queen Mary University of London created biodegradable, flexible, and electrically conductive nanocomposite films made using potato starch instead of petroleum-based materials. The starch-based films decompose within a month when buried in soil. In addition to starch, the nanocomposite films contain the conductive 2D material MXene. Adjusting the ... » read more

Key Technologies To Extend EUV To 14 Angstroms


The top three foundries plan to implement high-NA EUV lithography as early as 2025 for the 18 angstrom generation, but the replacement of single exposure high-NA (0.55) over double patterning with standard EUV (NA = 0.33) depends on whether it provides better results at a reasonable cost per wafer. So far, 2024 has been a banner year for high-numerical aperture EUV lithography. Intel Foundry... » read more

Exploring The Fundamentals Of Photolithography


In the semiconductor materials industry, photolithography is a crucial technology for creating intricate electronic circuits. Essentially, it’s the art of printing at the nanoscale level, enabling the precise patterning of semiconductor materials. The ability to do this well is important for companies in the industry because it determines how detailed and efficient microchips can be. This aff... » read more

Hybrid Photoresist Capable Of High-Resolution, Positive-Tone EUVL Patterning


A technical paper titled “Vapor-Phase Infiltrated Organic–Inorganic Positive-Tone Hybrid Photoresist for Extreme UV Lithography” was published by researchers at Stony Brook University, Brookhaven National Laboratory, and University of Texas at Dallas. Abstract: "Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microe... » read more

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