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Underlayer Optimization Method For EUV Lithography


Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more

Finding, Predicting EUV Stochastic Defects


Several vendors are rolling out next-generation inspection systems and software that locates problematic defects in chips caused by processes in extreme ultraviolet (EUV) lithography. Each defect detection technology involves various tradeoffs. But it’s imperative to use one or more of them in the fab. Ultimately, these so-called stochastic-induced defects caused by EUV can impact the perf... » read more

Improvement Of EUV Si Hardmask Performance Through Wet Chemistry Functionalization


In EUV lithography, spin-on silicon hardmasks have been widely used not only as etch transfer layers, but also as assist layers to enhance the lithographic performance of resist. In this study, we demonstrate a novel approach to functionalize spin-on silicon hardmasks by hybridizing them with functional groups through a sol-gel approach. By varying the concentration and type of the functional g... » read more

Survey: eBeam Initiative Luminaries (formerly Perceptions) Survey Results


Survey of 77 industry luminaries across 42 different companies in July 2020 says net neutral COVID-19 business impact by 2021, with 24% positive vs 20% negative predictions. Click here to view the survey results. » read more

Manufacturing Bits: Aug. 10


EUV mask cleaning process TSMC has developed a new dry-clean technology for photomasks used in extreme ultraviolet (EUV) lithography, a move that appears to solve some major problems in the fab. TSMC and Samsung are in production with EUV lithography at advanced nodes, but there are still several challenges with the photomasks and other parts of the technology. Using 13.5nm wavelengths, EUV... » read more

Manufacturing Bits: June 8


Maskless EUV lithography At this week’s 2020 EUVL Workshop, KJ Innovation will present more details about its efforts to develop a maskless extreme ultraviolet (EUV) lithography technology. Still in R&D, KJ Innovation’s maskless EUV technology involves a high-numerical aperture (high-NA) system with 2 million individual write beams. The 0.55 NA technology is targeted for direct-write l... » read more

Manufacturing Bits: June 2


EUV lithography in outer space The U.S. space program made history on May 31, 2020, when NASA astronauts Robert Behnken and Douglas Hurley aboard SpaceX’s Crew Dragon spacecraft arrived at the International Space Station (ISS). This is the first time a commercial spacecraft has delivered astronauts to the ISS. The ISS serves as a research lab for companies, government agencies and universiti... » read more

Super Planarizing Material For Trench And Via Arrays


As device design scales and becomes more complex, fine control of patterning and transfer steps is integral. Planarization of deep trenches and via arrays has always been a challenge. Aspect ratios continue to increase while critical dimensions shrink, and typical trench fill schemes are no longer able to meet the fill and planarization requirements. Traditional design of spin-on carbon (SOC) m... » read more

EUV Remains Elusive


By David Lammers Intel’s decision to invest as much as $4.1 billion in ASML has raised overall confidence levels in EUV lithography, and should allow the Dutch lithography vendor to funnel more funds into the stubbornly difficult effort to raise the EUV source power. ASML has said it needs to reach 250 Watts of average source power to achieve the 125 wph throughputs sought by its early cu... » read more

CNSE Readying NFX Fab for G450C, EUV Efforts


By David Lammers Two key areas of the semiconductor industry’s future—the 450mm wafer transition and EUV lithography—are the focus of the new NFX (NanoFab Xtension) building now under construction at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany. [caption id="attachment_6322" align="alignright" width="120" caption="Alain Kaloyeros"][/caption] T... » read more

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