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Investigation of the Resistivity and Emissivity of a Pellicle Membrane for EUV Lithography


New technical paper from Hanyang University and University of Texas at Dallas. Abstract "A pellicle is a thin membrane structure that protects an extreme ultraviolet (EUV) mask from contamination during the exposure process. However, its limited transmittance induces unwanted heating owing to the absorption of EUV photons. The rupture of the EUV pellicle can be avoided by improving its ther... » read more

International Roadmap for Devices and Systems lithography roadmap


Abstract: "Background: Planned improvements in semiconductor chip performance have historically driven improvements in lithography and this is expected to continue in the future. The International Roadmap for Devices and Systems roadmap helps the industry plan for the future. Aim: The 2021 lithography roadmap shows requirements, possible options, and challenges for the next 15 years. Resul... » read more

High-NA EUVL: the next major step in lithography


"In the course of 2025, we expect to see the introduction of the first high-NA extreme ultraviolet (EUV) lithography equipment in high-volume manufacturing environments. These next-generation lithography systems will be key to advance Moore’s Law towards the logic 2nm technology generation and beyond. In this article, imec scientists and engineers involved in preparing this major engine... » read more

Underlayer Optimization Method For EUV Lithography


Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more

Finding, Predicting EUV Stochastic Defects


Several vendors are rolling out next-generation inspection systems and software that locates problematic defects in chips caused by processes in extreme ultraviolet (EUV) lithography. Each defect detection technology involves various tradeoffs. But it’s imperative to use one or more of them in the fab. Ultimately, these so-called stochastic-induced defects caused by EUV can impact the perf... » read more

Improvement Of EUV Si Hardmask Performance Through Wet Chemistry Functionalization


In EUV lithography, spin-on silicon hardmasks have been widely used not only as etch transfer layers, but also as assist layers to enhance the lithographic performance of resist. In this study, we demonstrate a novel approach to functionalize spin-on silicon hardmasks by hybridizing them with functional groups through a sol-gel approach. By varying the concentration and type of the functional g... » read more

Survey: eBeam Initiative Luminaries (formerly Perceptions) Survey Results


Survey of 77 industry luminaries across 42 different companies in July 2020 says net neutral COVID-19 business impact by 2021, with 24% positive vs 20% negative predictions. Click here to view the survey results. » read more

Manufacturing Bits: Aug. 10


EUV mask cleaning process TSMC has developed a new dry-clean technology for photomasks used in extreme ultraviolet (EUV) lithography, a move that appears to solve some major problems in the fab. TSMC and Samsung are in production with EUV lithography at advanced nodes, but there are still several challenges with the photomasks and other parts of the technology. Using 13.5nm wavelengths, EUV... » read more

Manufacturing Bits: June 8


Maskless EUV lithography At this week’s 2020 EUVL Workshop, KJ Innovation will present more details about its efforts to develop a maskless extreme ultraviolet (EUV) lithography technology. Still in R&D, KJ Innovation’s maskless EUV technology involves a high-numerical aperture (high-NA) system with 2 million individual write beams. The 0.55 NA technology is targeted for direct-write l... » read more

Manufacturing Bits: June 2


EUV lithography in outer space The U.S. space program made history on May 31, 2020, when NASA astronauts Robert Behnken and Douglas Hurley aboard SpaceX’s Crew Dragon spacecraft arrived at the International Space Station (ISS). This is the first time a commercial spacecraft has delivered astronauts to the ISS. The ISS serves as a research lab for companies, government agencies and universiti... » read more

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