Optimizing EUV Source Efficiency With Radiation-Hydrodynamic Simulations (U. Of Osaka et al.)


Researchers from The University of Osaka, National Institute for Fusion Science, National Institutes for Quantum Science and Technology, and Osaka Metropolitan University, et al. have published “Optimization of EUV output by experimentally validated radiation-hydrodynamic simulations across a broad laser parameter space”.   Abstract “Practical requirements such as improving ... » read more

High-NA EU Lithography: Extending The STCC Formula (Science Tokyo)


A new technical paper, "Source-position-dependent transmission cross coefficient formula including polarization and mask three-dimensional effects in high-numerical-aperture extreme ultraviolet lithography" was published by researchers at Institute of Science Tokyo. This work is based on the paper presented at SPIE Advanced Lithography + Patterning 2026. "The polarization effect is not negli... » read more

Study of EUV Nanostructures Using AFM With High-Aspect Ratio Tip (Purdue, Intel, Bruker)


A new technical paper, "Characterizing tip-sample interaction dynamics on extreme ultraviolet nanostructures using atomic force microscopy with a high-aspect ratio tip," was released by researchers at Purdue University, Intel Corporation and Bruker Corporation. Abstract "Accurate measurements of the nanometer scale geometry of extreme ultraviolet (EUV) lithography photoresist patterns are... » read more

Considerations For The Introduction of New EUV Resist Materials To A Fab (KU Leuven, imec)


A new technical paper titled "Process and materials compatibility considerations for introducing novel extreme ultraviolet resists in a fab: a guide for academia and entrepreneurs" was published by researchers at KU Leuven and imec. Abstract Excerpt "Despite having novel ideas, most researchers struggle to introduce their resist into an advanced fab, i.e., a facility where all the industr... » read more

Systematic Lithographic Patterning Characterization Of An Al-based Hybrid Resist (Stonybrook, UT Dallas, Brookhaven)


A new technical paper titled "Molecular Layer Deposited Aluminum-Based Hybrid Resist for High-Resolution Nanolithography and Direct Ultra-High Aspect Ratio Pattern Transfer" was published by researchers at Stony Brook University, the University of Texas at Dallas, and Brookhaven National Laboratory. Excerpt "Here, this study reports the systematic lithographic patterning characterization ... » read more

Blend Strategy To Improve Edge Resistance Capability And Thickness Of EUV-Fabricated Nanopatterns (National Tsing Hua Univ.)


A new technical paper titled "Enhanced Edge Etching Resistance and EUV Lithographic Performance of a Tin-Oxide Photoresist via a Blend Strategy" was published by researchers at National Tsing Hua University. Abstract "Enhancing the edge resistance capability of extensively studied metal carboxylate clusters as extreme ultraviolet (EUV) photoresists is a formidable and unsolved task. This wo... » read more

An Overview Of Recent Progress On The EUV + DSA Strategy (Univ. of Chicago, Berkeley Lab, Argonne)


A new technical paper titled "Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography" was published by researchers at University of Chicago, Lawrence Berkeley National Laboratory and Argonne National Laboratory. Abstract "Extreme ultraviolet (EUV) lithography enables unprecedented resolution in semiconductor patterning but face... » read more

First Stage Of Nanoscale Imaging In Positive-Tone EUV Photoresists: The Impact Of Polymer Sequence (Berkeley Lab, Columbia Hill)


A new technical paper titled "Initial stage of nanoscale imaging in positive-tone extreme UV photoresists: the influence of polymer sequence" was published by researchers at Lawrence Berkeley National Laboratory and Columbia Hill Technical Consulting. Abstract "Photolithographic patterning using extreme ultraviolet (EUV, 92.5 eV) light is a radiolytic process that initially forms electrons,... » read more

Viability of aZnMIm As A Resist For EUV Lithography (Johns Hopkins, Northwestern, Intel et al.)


A new technical paper (preprint) titled "Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition" was published by researchers at Johns Hopkins University, Northwestern University, Intel Corporation, Bruker Nano, EUV Tech and Lawrence Berkeley National Lab. The paper states "This study demonstr... » read more

Reaction Mechanisms in a Chemically Amplified EUV Photoresist (imec, KU Leuven)


A new technical paper titled "Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach" was published by researchers at imec and KU Leuven. "Our combined experimental and theoretical approach shows that EUV photoemission can simultaneously resolve chemical dynamics and the production of primary and secondary electrons,... » read more

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