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Underlayer Optimization Method For EUV Lithography


Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more

Defect Detection Strategies and Process Partitioning for SE EUV Patterning


ABSTRACT The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e-beam systems, find it difficult to detect the main yield-detracting defects post-develop, and thus understanding the effects of process ... » read more