Author's Latest Posts


Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory


ABSTRACT "Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access transistors per bit. Here, we report a multibit SOT cell that has a single write chan... » read more

Single Chip Auto-Valet Parking System with TDA4VMID SoC


Abstract "Auto-Valet parking is a key emerging function for Advanced Driver Assistance Systems (ADAS) enhancing traditional surround view system providing more autonomy during parking scenario. Auto-Valet parking system is typically built using multiple HW components e.g. ISP, micro-controllers, FPGAs, GPU, Ethernet/PCIe switch etc. Texas Instrument’s new Jacinto7 platform is one of industry... » read more

The Decadal Plan for Semiconductors


Semiconductor Research Corporation and Semiconductor Industry Association released the full Decadal Plan for Semiconductors: a roadmap, for 2030 and beyond. It’s a report that outlines chip research and funding priorities for the next decade. Find the Report Overview, Abridged Report and the Full Report here. » read more

5G as a wireless power grid


Abstract "5G has been designed for blazing fast and low-latency communications. To do so, mm-wave frequencies were adopted and allowed unprecedently high radiated power densities by the FCC. Unknowingly, the architects of 5G have, thereby, created a wireless power grid capable of powering devices at ranges far exceeding the capabilities of any existing technologies. However, this potential c... » read more

Learning properties of ordered and disordered materials from multi-fidelity data


Source: Chen, C., Zuo, Y., Ye, W. et al. Learning properties of ordered and disordered materials from multi-fidelity data. Nat Comput Sci 1, 46–53 (2021). https://doi.org/10.1038/s43588-020-00002-x Abstract: "Predicting the properties of a material from the arrangement of its atoms is a fundamental goal in materials science. While machine learning has emerged in recent years as a n... » read more

Improving the Performance Of Deep Neural Networks


Source: North Carolina State University. Authors: Xilai Li, Wei Sun, and Tianfu Wu Abstract: "In state-of-the-art deep neural networks, both feature normalization and feature attention have become ubiquitous. They are usually studied as separate modules, however. In this paper, we propose a light-weight integration between the two schema and present Attentive Normalization (AN). Instead of l... » read more

Versatile Thin‐Film Transistor with Independent Control of Charge Injection and Transport for Mixed Signal and Analog Computation


Source: University Of Surrey: Eva Bestelink Olivier de Sagazan Lea Motte Max Bateson Benedikt Schultes S. Ravi P. Silva Radu A. Researchers at University of Surrey and Université de Rennes developed a new device, called a Multimodal Transistor (MMT), that is immune to parasitic effects. In the MMT, on/off switching is controlled independently from the amount of current passing th... » read more

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots


Researchers at Los Alamos National Laboratory and University of California Irvine used quantum dots to create transistors which can be assembled into functional logic circuits. “Potential applications of the new approach to electronic devices based on non-toxic quantum dots include printable circuits, flexible displays, lab-on-a-chip diagnostics, wearable devices, medical testing, smart im... » read more

IoT Cybersecurity Improvement Act of 2020


The "IoT Cybersecurity Improvement Act of 2020" became a U.S. law on 12/4/2020.   The legislation was passed by unanimous consent by the Senate and the House of Representatives. Congress.Gov states: "This bill requires the National Institute of Standards and Technology (NIST) and the Office of Management and Budget (OMB) to take specified steps to increase cybersecurity for Internet of ... » read more

Pressure-induced Anderson-Mott transition in elemental tellurium


Oliveira, J.F., Fontes, M.B., Moutinho, M. et al. Pressure-induced Anderson-Mott transition in elemental tellurium. Commun Mater 2, 1 (2021). https://doi.org/10.1038/s43246-020-00110-1 Abstract: "Elemental tellurium is a small band-gap semiconductor, which is always p-doped due to the natural occurrence of vacancies. Its chiral non-centrosymmetric structure, characterized by helical chains ... » read more

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