Author's Latest Posts


Selected I-III-VI2 Semiconductors: Synthesis, Properties, and Applications (Université de Lorraine)


A technical paper titled “Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells” was published by researchers at Université de Lorraine, CNRS. Abstract: "I–III–VI2 group quantum dots (QDs) have attracted high attention in photoelectronic conversion applications, especially for QD-sensitized solar cells (QDSSCs). This group of... » read more

LLM Inference On CPUs (Intel)


A technical paper titled “Efficient LLM Inference on CPUs” was published by researchers at Intel. Abstract: "Large language models (LLMs) have demonstrated remarkable performance and tremendous potential across a wide range of tasks. However, deploying these models has been challenging due to the astronomical amount of model parameters, which requires a demand for large memory capacity an... » read more

Neuromorphic Devices Based On Memristive Nanowire Networks


A technical paper titled “Online dynamical learning and sequence memory with neuromorphic nanowire networks” was published by researchers at University of Sydney, University of California Los Angeles (UCLA), National Institute for Materials Science (NIMS), Kyushu Institute of Technology (Kyutech), and University of Sydney Nano Institute. Abstract: "Nanowire Networks (NWNs) belong to an em... » read more

Hybrid Photoresist Capable Of High-Resolution, Positive-Tone EUVL Patterning


A technical paper titled “Vapor-Phase Infiltrated Organic–Inorganic Positive-Tone Hybrid Photoresist for Extreme UV Lithography” was published by researchers at Stony Brook University, Brookhaven National Laboratory, and University of Texas at Dallas. Abstract: "Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microe... » read more

Analog In-Memory Cores With Multi-Memristive Unit-Cells (IBM)


A technical paper titled “Exploiting the State Dependency of Conductance Variations in Memristive Devices for Accurate In-Memory Computing” was published by researchers at IBM Research-Europe, IBM Research-Albany, and IBM Research-Yorktown Heights. Abstract: "Analog in-memory computing (AIMC) using memristive devices is considered a promising Non-von Neumann approach for deep learning (DL... » read more

A HIL Methodology For The SoC Development Flow


A technical paper titled “Virtual-Peripheral-in-the-Loop : A Hardware-in-the-Loop Strategy to Bridge the VP/RTL Design-Gap” was published by researchers at University of Bremen and German Research Center for Artificial Intelligence (DFKI). Abstract: "Virtual Prototypes act as an executable specification model, offering a unified behavior reference model for SW and HW engineers. However, b... » read more

Using Atomic Vacancies In Silicon Carbide To Measure The Stability And Quality Of Acoustic Resonators


A technical paper titled “Spin-acoustic control of silicon vacancies in 4H silicon carbide” was published by researchers at Harvard University and Purdue University. Abstract: "Bulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challenging as... » read more

Verifying The Integrity Of ICs Based On Their Electromagnetic (EM) Near-Field Emissions


A technical paper titled “Contact-Less Integrity Verification of Microelectronics Using Near-Field EM Analysis” was published by researchers at University of Florida and Brookhaven National Laboratory. Abstract: "Modern microelectronics life-cycle and supply chain ecosystem bring multiple untrusted entities, which can compromise their integrity. A major integrity issue of microelectronics... » read more

High-Speed Sparse Scanning Kelvin Probe Force Microscopy


A technical paper titled “High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy” was published by researchers at Oak Ridge National Laboratory, (ORNL), Sungkyunkwan University, Case Western Reserve University, Flinders University, Bedford Park, and UNSW Sydney. Abstract: "Unraveling local dynamic charge processes is vital for progress in diverse... » read more

Highly Stacked Nanowire FETs To Enhance Drive Current And Transistor Density


A technical paper titled “Fabrication and performance of highly stacked GeSi nanowire field effect transistors” was published by researchers at National Taiwan University. Abstract: "Horizontal gate-all-around field effect transistors (GAAFETs) are used to replace FinFETs due to their good electrostatics and short channel control. Highly stacked nanowire channels are widely believed to en... » read more

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