Verifying The Integrity Of ICs Based On Their Electromagnetic (EM) Near-Field Emissions


A technical paper titled “Contact-Less Integrity Verification of Microelectronics Using Near-Field EM Analysis” was published by researchers at University of Florida and Brookhaven National Laboratory.


“Modern microelectronics life-cycle and supply chain ecosystem bring multiple untrusted entities, which can compromise their integrity. A major integrity issue of microelectronics stems from piracy of intellectual properties (IP) and counterfeiting, which causes significant revenue loss to the semiconductor manufacturers. Further, these components often lead to compromised functionality, reliability, security, and safety of an electronic system. This paper presents secure information transmission and probing methods for verifying the integrity of digital integrated circuit (ICs) based on their electromagnetic (EM) near-field emissions and thereby protecting systems against counterfeit components. The proposed method has been tested on both high-level instructions executed by microprocessors or Systems-on-Chip (serving as examples of software), and also logic circuits within FPGA fabrics and ASICs (serving as examples of hardware). The authentication information required by each digital system is generated using a pseudo-random number generator circuit and securely transmitted via near-field magnetic emissions. The authorized party can probe these emissions using a near-field probe, process the acquired signals to improve the signal-to-noise ratio (SNR), and then recover the secure information through matched filtering. Experimental results from commercial SoCs are used to demonstrate the proposed technique. Methods for reducing EM interference during integrity verification of both FPGAs and ASICs are also described.”

Find the technical paper here. Published July 2023.

J. Huan, P. Dehghanzadeh, S. Mandal and S. Bhunia, “Contact-Less Integrity Verification of Microelectronics Using Near-Field EM Analysis,” in IEEE Access, vol. 11, pp. 80588-80599, 2023, doi: 10.1109/ACCESS.2023.3300222.

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