Using Atomic Vacancies In Silicon Carbide To Measure The Stability And Quality Of Acoustic Resonators


A technical paper titled “Spin-acoustic control of silicon vacancies in 4H silicon carbide” was published by researchers at Harvard University and Purdue University.


“Bulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challenging as the surface information available through laser Doppler vibrometry lacks information about the acoustic energy stored in the bulk of the resonator. Here we report the spin-acoustic control of naturally occurring negatively charged silicon monovacancies in a lateral overtone bulk acoustic resonator that is based on 4H silicon carbide. We show that acoustic driving can be used at room temperature to induce coherent population oscillations. Spin-acoustic resonance is shown to be useful as a frequency-tunable probe of bulk acoustic wave resonances, highlighting the dynamical strain distribution inside a bulk acoustic wave resonator at ambient operating conditions. Our approach could be applied to the characterization of other high-quality-factor microelectromechanical systems and has the potential to be used in mechanically addressable quantum memory.”

Find the technical paper here. Published September 2023. Read this related news article from Harvard School of Engineering.

Dietz, J.R., Jiang, B., Day, A.M. et al. Spin-acoustic control of silicon vacancies in 4H silicon carbide. Nat Electron 6, 739–745 (2023). https://doi.org/10.1038/s41928-023-01029-4

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