category: Manufacturing Solutions

category: IoT, Security & Automotive

TCAD-Based AI Models For Modern Fab Workflows
By Saurabh Suryavanshi - 20 Mar, 2025 - Comments: 0

The relentless pace of semiconductor development continues unabated. Despite the slowdown in Moore’s law, feature sizes continue to shrink as new geometries come online. Constant innovations in both fab processes and device design offer new opportunities but present new challenges. As in so many other areas of electronics, artificial intelligence (AI) is starting to play a significant role. ... » read more

Speeding Up Computational Lithography With The Power And Parallelism Of GPUs
By Thuc Dam - 20 Feb, 2025 - Comments: 0

There are so many challenges in producing modern semiconductor devices that it’s amazing for the industry to pull it off at all. From the underlying physics to fabrication processes to the development flow, there is no shortage of tough issues to address. Some of the biggest arise in lithography for deep submicron chips. A recent post outlined the major trends in lithography and summarized a ... » read more

More Than Meets The Eye: Trends In Lithography
By Travis Brist - 23 Jan, 2025 - Comments: 0

Lithography, once the exclusive domain of artists and printmakers, also lies at the heart of integrated circuit (IC) production. The process of shining light on a substrate through a photomask to control exposure has been around since the 1960s and has been the key part of improving IC fabrication process resolution. At the time, the light sources used were in the human-visible spectrum, which ... » read more

TCAD Simulation Challenges For Gate-All-Around Transistors
By Victor Moroz - 17 Dec, 2024 - Comments: 0

By Victor Moroz and Shela Aboud The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of transistor design that need to be addressed. One of the challenges is handling the thin Si layers that come with GAA technology, where Si channel thickness scale... » read more

Tuning Design And Process For High-NA EUV Stitching
By Kevin Lucas - 24 Oct, 2024 - Comments: 0

By Kevin Lucas and James Ban Upcoming 14A and 10A process nodes will use high-NA EUV anamorphic scanners, which will require two stitched half-fields to achieve the equivalent wafer exposure area of previous-generation scanners, see figure 1. The lithography patterning at a stitching boundary between two mask exposures will be affected by additional process variation than are encountered in ... » read more

Bringing Curvilinear Data To Mask Data Prep
By Al Blais - 15 Aug, 2024 - Comments: 0

Advanced nodes that have been leveraging curvilinear correction with technologies such as ILT and curvilinear OPC are increasingly requiring the use of curvilinear masks to meet advanced feature size and pitch requirements. However, building curvilinear masks with standard OASIS file formats can come at the cost of large file sizes, increased turnaround time, and reduced quality of results. The... » read more

Metrology Analysis Tool For Photolithography Process Characterization At Advanced Nodes
By Wolfgang Demmerle - 23 Jul, 2024 - Comments: 0

Continued scaling of integrated circuits to smaller dimensions is still a viable way to increase compute power, achieve higher memory cell density, or reduce power consumption. These days, chip makers are using single-digit nanometer figures or even Angstrom to label their manufacturing technology nodes, which are associated with the size of features patterned during the lithography process. ... » read more

Applying Machine Learning To Accelerate TCAD Calibration
By Dwight Hunter - 20 Jun, 2024 - Comments: 0

TCAD models are the fundamental building blocks for the semiconductor industry. Whether it is a new process node or a new multi-billion dollar fab, accurate TCAD models must be developed and calibrated before they can be deployed in technology development. While TCAD models have been around for (many) decades, their complexity is growing exponentially, as is the demands placed on the R&D en... » read more

Accelerating Innovation With An E-Beam Lithography System
By Al Blais - 23 May, 2024 - Comments: 0

By Al Blais and Johnny Yeap Traditional lithography remains a standard in the industry, providing precision and a relatively cost-effective way to create patterns on the wafer when producing very high volumes of chips. However, cycle times can be long depending on the complexity of the masks that must be made. The emergence of maskless e-beam lithography is providing a complementary path ... » read more

Enabling New Applications With SiC IGBT And GaN HEMT For Power Module Design
By Shela Aboud - 18 Apr, 2024 - Comments: 0

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and impactful electrification is now under way for electric vehicles (EVs). Beyond the transition to electric engines, several new features and technologies are driving the electrification of vehicles... » read more

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