Using Automatic Defect Classification To Reduce The Escape Rate Of Defects


Automated optical inspection (AOI) is a cornerstone in semiconductor manufacturing, assembly and testing facilities, and as such, it plays a crucial role in yield management and process control. Traditionally, AOI generates millions of defect images, all of which are manually reviewed by operators. This process is not only time-consuming but error prone due to human involvement and fatigue, whi... » read more

Using Picosecond Ultrasonics To Measure Trench Structures In SiC Power Devices


The road to the future is not always a smooth, trouble-free drive. Along the way, there may be unforeseen detours, potholes and accidents, each one capable of setting progress back. But for those behind the wheel, those obstacles are just a part of the journey. Such is the case for the automotive industry as it continues to steer away from gas-powered vehicles and turn toward hybrid and elec... » read more

Using OCD To Measure Trench Structures In SiC Power Devices


You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet days of electric vehicles. The signs of this transition are right there on the streets in the form of electric-powered buses, bikes and cars. The road to our electric future is before us, but we w... » read more

Using FTIR To Improve SiC Power Device Performance


The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

A Bare Wafer Mystery: Inspecting For Back, Edge, And Notch Defects In Advanced Nodes


It is no mystery that the semiconductor industry is always advancing, with specifications becoming increasingly stringent as defects become increasingly more difficult to discover. This is especially true in the case of the most advanced nodes, where ever-smaller flaws and deformities can result in a killer defect. To solve this More than Moore mystery, you do not need to employ the detectiv... » read more

Addressing Trench Structures And Larger Wafers For Power Devices


Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

Optimizing Metal Film Measurement On IGBT And MOSFET Power Devices With Picosecond Ultrasonic Technology


By Johnny Dai with Cheolkyu Kim and Priya Mukundhan In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power semiconductor devices will be insulated gate bipolar transistor (IGBT) and power metal oxide semiconductor field effect transistor (power MOSFET) ... » read more

The Glass Substrate Question: When Will It Replace Copper Clad Laminate?


"When will glass replace copper clad laminate on advanced IC substrates?" That’s a question many on the heterogeneous integration (HI) side of the semiconductor industry are asking. Unfortunately, the answer is not straightforward. But before we get to answering that, let’s take an advanced IC substrate (AICS) refresher. In other words, how did we get to the point where glass substrat... » read more

3D NAND Needs 3D Metrology


By Nick Keller and Andy Antonelli You’ve read the reports: the memory market is floundering as the semiconductor industry moves through another scarcity/surplus cycle. Be that as it may, innovation is happening as the industry continues to pursue increasingly higher three-dimensional stacks, with 3D NAND stacks taller than 200 layers entering production. However, there are challenges... » read more

Addressing Copper Clad Laminate Processing Distortion Using Overlay Corrections


All great voyages must come to an end. Such is the case with our series on the challenges facing the manufacturing of advanced IC substrates (AICS), the glue holding the heterogeneous integration ship together. In our first blog, we examined how cumulative overlay drift from individual redistribution layers could significantly increase overall trace length, resulting in higher interconnect res... » read more

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