Power/Performance Bits: July 20


Shrinking RFID chips Researchers at North Carolina State University built a new, tiny RFID chip. They expect the chip to help drive down costs for RFID tags, making it possible to embed them in more things for supply chain security. "As far as we can tell, it's the world's smallest Gen2-compatible RFID chip," said Paul Franzon, Professor of Electrical and Computer Engineering at NC State. I... » read more

Manufacturing Bits: July 13


Heterogenous III-V packaging At the recent 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), a group presented a paper on the development of a wafer-level fan-out package using heterogenous III-V devices. This paper deals with the packaging of two III-V chips for use in RF transceiver applications in base stations. III-V Lab, CEA-Leti, Thales and United Monolithic Semic... » read more

Power/Performance Bits: July 13


Graphene PUFs Researchers at Pennsylvania State University propose using graphene to create physically unclonable functions (PUFs) that are energy efficient, scalable, and secure against AI attacks. The team first fabricated nearly 2,000 identical graphene transistors. Despite their structural similarity, the transistors' electrical conductivity varied due to the inherent randomness arising... » read more

Manufacturing Bits: June 29


Speeding up ALD with AI The U.S. Department of Energy’s (DOE) Argonne National Laboratory has developed various ways to make atomic layer deposition (ALD) more efficient by using artificial intelligence (AI). ALD is a deposition technique that deposits materials one layer at a time on chips. For years, ALD has been used for the production of DRAMs, logic devices and other products. In ... » read more

Power/Performance Bits: June 29


Persistent photoconductivity Researchers at the U.S. Department of Energy's National Renewable Energy Laboratory (NREL), University of Wisconsin Madison, and the University of Toledo, discovered a unique effect in metal-halide perovskite semiconductors that could be used in neuromorphic computing systems. Perovskites are currently being investigated as highly efficient solar cells. In fact,... » read more

Manufacturing Bits: June 22


5G metasurface antennas At the recent 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), the Institute of Microelectronics of the Chinese Academy of Sciences (CAS) presented a paper on a low-profile broadband metasurface antenna for 5G antenna-in-package applications. The National Center for Advanced Packaging and the University of Chinese Academy of Sciences also contri... » read more

Power/Performance Bits: June 22


Terahertz silicon multiplexer Researchers from Osaka University and University of Adelaide designed a silicon multiplexer for terahertz-range communications in the 300-GHz band. “In order to control the great spectral bandwidth of terahertz waves, a multiplexer, which is used to split and join signals, is critical for dividing the information into manageable chunks that can be more easily... » read more

Manufacturing Bits: June 15


Next-gen RF signal processors Sandia National Laboratories has taken steps to realize the development of acoustic wave amplifiers, a technology that could one day pave the way towards long-awaited tiny RF signal processors. Researchers have developed piezoelectric acoustic devices using surface acoustic wave (SAW) technology and demonstrated the ability to manufacture these devices. Still i... » read more

Power/Performance Bits: June 15


Low-loss photonic IC Researchers at EPFL built a photonic integrated circuit with ultra-low loss. The team focused on silicon nitride (Si3N4), which has orders of magnitude lower optical loss compared to silicon. It is used in low-loss applications such as narrow-linewidth lasers, photonic delay lines, and nonlinear photonics. In applying the material to photonic ICs, they took advantage... » read more

Manufacturing Bits: June 7


High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

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