Manufacturing Bits: Feb. 4


Non-targeted analysis Using a technology called machine learning, the Southwest Research Institute has introduced a software tool that detects known and unknown chemical components in food, air and drugs. It detects compounds in products we are exposed to every day using both machine learning and metrology techniques. A subset of artificial intelligence (AI), machine learning uses advanced ... » read more

Power/Performance Bits: Feb. 4


Infrared nanoantenna Researchers at the University of Würzburg built a nanoantenna capable of generating directed infrared light. The Yagi-Uda antenna is the smallest of its type yet created. "Basically, it works in the same way as its big brothers for radio waves ," said René Kullock, a member of the nano-optics team at Würzburg. An AC voltage is applied that causes electrons in the met... » read more

Manufacturing Bits: Jan. 28


Fast photography The California Institute of Technology has developed a high-speed camera that can take pictures of transparent objects. The technology, called phase-sensitive compressed ultrafast photography (pCUP), can take up to 1 trillion pictures per second of transparent objects. Potentially, the technology from Caltech could be used in several applications, such as taking photos of s... » read more

Power/Performance Bits: Jan. 28


Accelerator-on-chip Researchers at Stanford University and SLAC National Accelerator Laboratory created an electron-accelerator-on-chip. While the technique is much less powerful than standard particle accelerators, it can be much smaller. It relied upon an infrared laser to deliver, in less than a hair’s width, the sort of energy boost that takes microwaves many feet. The team carved ... » read more

Manufacturing Bits: Jan. 21


New high-frequency transistors The Fraunhofer Institute for Applied Solid State Physics IAF has developed a novel high-frequency transistor type—the metal oxide semiconductor HEMT or MOSHEMT. Still in R&D, Fraunhofer’s MOSHEMT has reached record frequencies of 640GHz. MOSHEMTs are designed for the 100GHz frequency ranges and above. Applications include communications, radar and sens... » read more

Power/Performance Bits: Jan. 21


Two-layer MRAM Scientists at Tokyo Institute of Technology propose a simpler MRAM construction that could perform faster with less power than conventional memories. The idea relies on unidirectional spin Hall magnetoresistance (USMR), a spin-related phenomenon that could be used to develop MRAM cells with an extremely simple structure. The spin Hall effect leads to the accumulation of elect... » read more

Manufacturing Bits: Jan. 13


Plastic gold ETH Zurich has developed an 18-carat gold nugget based on plastic. Instead of traditional metallic alloy elements, ETH’s gold nugget consists of a matrix of plastic. Weighing five to ten times less than traditional gold, ETH’s plastic gold can be used in watches, jewelry, radiation shielding, catalysis and electronics. Gold is a chemical element used in a plethora of app... » read more

Power/Performance Bits: Jan. 13


Ferroelectric memory Researchers at the Moscow Institute of Physics and Technology and North Carolina State University developed a ferroelectric memory cell and a method for measuring the electric potential distribution across a ferroelectric capacitor, an important aspect of creating new nonvolatile ferroelectric devices. The team's new ferroelectric memory cell is made from a 10nm thick z... » read more

Manufacturing Bits: Jan. 7


Beyond 5G chips At the recent IEEE International Electron Devices Meeting (IEDM), NTT and the Tokyo Institute of Technology presented a paper on a technology that could enable high-speed wireless devices beyond the 5G standard. Researchers have devised a 300GHz wireless transceiver (TRx) that supports a data rate of more than 100Gb/s. The device is based on a technology called indium phosph... » read more

Power/Performance Bits: Jan. 7


Ferroelectric FET Researchers at Purdue University developed a ferroelectric transistor capable of both processing and storing information. The ferroelectric semiconductor field-effect transistor is made of alpha indium selenide, which overcomes the problem of ferroelectric materials not interfacing well with silicon. “We used a semiconductor that has ferroelectric properties. This way tw... » read more

← Older posts Newer posts →