Manufacturing Bits: April 10


Higher power GaN Imec and Qromis have announced the development of a new gallium nitride (GaN) substrate technology that enables power devices at 650 volts and above. GaN is an emerging technology for power semiconductor applications. Based on a GaN-on-silicon technology, GaN-based power semis operate at 650 volts and above. In simple terms, the buffer layers between the GaN device and the ... » read more

Manufacturing Bits: April 3


World's brightest accelerator Japan’s High Energy Accelerator Research Organization (KEK) is readying what is considered the world’s most luminous or brightest particle accelerator. The system, dubbed the SuperKEKB, combines an electron-positron collider with a new and advanced detector. The storage ring system is designed to explore and measure rare decays of elementary particles, such... » read more

Manufacturing Bits: March 27


Nanostructure printers Using electron-beam lithography and reactive-ion etching techniques, Singapore’s Agency for Science, Technology and Research (A*STAR) has developed a new high-resolution color nanostructure printing system. The printer enables nanostructures made from silicon. It prints tiny structures with a wide range of colors. In the future, researchers hope that nanostructure ... » read more

Manufacturing Bits: March 20


Giant thermometer The Department of Energy's Oak Ridge National Laboratory has devised a new way to take the temperature of a material at the nanoscale—the organization has developed a giant thermometer. The technology, dubbed electron energy gain spectroscopy, enables researchers to take the temperature of a material from an area at about a billionth of a meter wide. Developed by Nion, t... » read more

Manufacturing Bits: March 13


Gallium oxide substrates Kyma Technologies has rolled out a substrate line based on crystalline beta-phase gallium oxide (β-Ga2O3) materials. [caption id="attachment_24132458" align="alignleft" width="300"] Single crystal gallium oxide (ß-Ga2O3) substrates (Source: Kyma)[/caption] Crystalline beta gallium oxide is a promising wide bandgap semiconductor material. It has a large bandgap... » read more

Manufacturing Bits: March 6


Security ICs with multi-beam Leti, a research institute of CEA Tech, and Mapper Lithography have developed a new application for its multi-beam, direct-write lithography technology—security. In 2016, Mapper Lithography introduced the FLX-1200, a direct-write, multi-beam e-beam system. Using a 5-kV acceleration voltage, a beam generator creates an electron beam about 3cm in diameter. Then,... » read more

Manufacturing Bits: Feb. 27


Magnesium-ion batteries Texas A&M University and others have discovered a new metal-oxide magnesium battery cathode material—a technology that promises to deliver a higher density of energy storage than today’s traditional lithium-ion (Li-ion) cells. Magnesium-ion battery technology is promising. A battery consists of an anode (negative), cathode (positive), electrolytes and a separat... » read more

Manufacturing Bits: Feb. 20


Hedgehog spin-vortex crystals The U.S. Department of Energy’s Ames Laboratory has discovered a missing piece to enable novel superconductor devices--the hedgehog spin-vortex crystal phase. Superconductors are devices that have zero electrical resistance, making them attractive for a range of applications. But superconductors must be cooled down to temperatures at or near absolute zero on ... » read more

Manufacturing Bits: Feb. 13


Watching nanowires grow Using X-ray techniques, the University of Siegen and the Karlsruhe Institute of Technology (KIT) have observed the formation of tiny nanowires in gallium arsenide (GaAs) materials in real time. GaAs is used for fiber optics, infrared systems, RF devices in mobile phones and solar panels in spacecraft. Observing the growth of GaAs nanowires could lead to a better unde... » read more

Manufacturing Bits: Feb. 6


GaN trusted foundry HRL Laboratories--an R&D venture between Boeing and General Motors--has launched a new foundry service for use in advanced millimeter-wave (mmWave) gallium-nitride (GaN) technology applications. HRL’s process, called T3-GaN, is a high-electron-mobility transistor technology. It will enable the fabrication of GaN-based monolithic microwave integrated circuits (MMICs... » read more

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