High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)


A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

Viability of aZnMIm As A Resist For EUV Lithography (Johns Hopkins, Northwestern, Intel et al.)


A new technical paper (preprint) titled "Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition" was published by researchers at Johns Hopkins University, Northwestern University, Intel Corporation, Bruker Nano, EUV Tech and Lawrence Berkeley National Lab. The paper states "This study demonstr... » read more

Device Architecture For 2D Material-Based mNS-FETs In Sub-1nm Nodes (Sungkyunkwan Univ., Alsemy)


A new technical paper titled "Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes" was published by researchers at Sungkyunkwan University and Alsemy Inc. "This paper explores the design and optimization of multi-Nanosheet Field-Effect Transistors (mNS-FETs) employing a Transition Metal Dichalcogenide (TMDC) channel, specifically MoS2, for the 0.7 nm technology node u... » read more

Wafer Bonding Mechanisms Using SiCN Films For Hybrid Bonding Applications In 3D Integration 


A new technical paper titled "Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration" was published by researchers at Yokohama National University, TEL, SK hynix, and University of Tsukuba. According to the paper: "Although much research has been conducted on wafer bonding methods compatible with the latest semiconductor manufacturing processes, discussions on the interface... » read more

Platform for LN-Based Wavelength-Scale Integrated Phononic Waveguides On Diamond (Stanford, UCSB)


A new technical paper titled "Integrated phononic waveguide on thin-film lithium niobate on diamond" was published by researchers at Stanford University and UC Santa Barbara. Abstract "We demonstrate wavelength-scale phononic waveguides formed by transfer-printed thin-film lithium niobate (LN) on bulk diamond (LNOD), a material stack that combines the strong piezoelectricity of LN with the ... » read more

Analytical Methods For Analyzing PFAS In Semiconductor Wastewater (Oregon State University)


A new technical paper titled "Practical Guidance on Selecting Analytical Methods for PFAS in Semiconductor Manufacturing Wastewater" was published by researchers at Oregon State University, Corvallis. Abstract "The focus of this review is to provide an overview of the nomenclature, structure, and properties of perfluoroalkyl and polyfluoroalkyl substances (PFAS) that dictate the selection o... » read more

Domain Adaptation for Image Classification of Defects in Semiconductor Manufacturing (Infineon, U. Padova et al.)


A new technical paper titled "Domain Adaptation for Image Classification of Defects in Semiconductor Manufacturing" was published by researchers at Infineon Technologies, University of Padova and University of Bologna. Abstract "In the semiconductor sector, due to high demand but also strong and increasing competition, time to market and quality are key factors in securing significant marke... » read more

Thermoelectricity in Topological Flat-Band Compounds (TU Wien, et al.)


A new technical paper titled "Topological Flat-Band-Driven Metallic Thermoelectricity" was published by researchers at TU Wien, Los Alamos National Lab, Flatiron Institute and others. Abstract "Materials where flattened electronic dispersions arise from destructive phase interference, rather than localized orbitals, have emerged as promising platforms for studying emergent quantum phenome... » read more

Reaction Mechanisms in a Chemically Amplified EUV Photoresist (imec, KU Leuven)


A new technical paper titled "Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach" was published by researchers at imec and KU Leuven. "Our combined experimental and theoretical approach shows that EUV photoemission can simultaneously resolve chemical dynamics and the production of primary and secondary electrons,... » read more

EUV Lithography: The Resolution Capability And Stochastic Behavior From Statistical Viewpoints


A new technical paper titled "Statistics of EUV exposed nanopatterns: Photons to molecular dissolutions" was published by Hiroshi Fukuda, Hitachi High-Tech Corporation. Abstract "For higher computing power of semiconductor integrated circuits, pattern feature sizes below 10 nm are anticipated by introducing extreme ultraviolet (EUV) lithography with high numerical aperture (NA) optics. Ho... » read more

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