category: Manufacturing

category: IoT, Security & Automotive

Optimization of Oxygen Plasma Conditions for Cu-Cu Bonding
By Technical Paper Link - 04 Feb, 2025 - Comments: 0

A new technical paper titled "Understanding and Optimizing Oxygen Plasma Treatment for Enhanced Cu-Cu Bonding Application" was published by researchers at Seoul National University of Science and Technology. Abstract "This study investigates the optimization of O2 plasma treatment conditions to enhance Cu-Cu bonding. The O2 plasma treatment conditions were optimized using Design of Experime... » read more

Indium Tungsten Oxide (IWO) Thin-Film Transistors
By Technical Paper Link - 04 Feb, 2025 - Comments: 0

A new technical paper titled "Thermally Dependent Metastability of Indium-Tungsten-Oxide Thin-Film Transistors" was published by researchers at Rochester Institute of Technology and Corning Research and Development Corporation. Abstract "Indium tungsten oxide (IWO) has been investigated as an oxide semiconductor candidate for next-generation thin-film transistors (TFTs). Bottom-gate TFTs we... » read more

Indium Nitrate As An Advanced Metal-Oxide Resist for EUV Lithography
By Technical Paper Link - 03 Feb, 2025 - Comments: 0

A new technical paper titled "Sensitivity and contrast of indium nitrate hydrate resist evaluated by low-energy electron beam and extreme ultraviolet exposure" was published by researchers at UT Dallas. "We evaluate the sensitivity and contrast of indium nitrate resists by analyzing dose curves collected using electron beam lithography (EBL) and extreme ultraviolet (EUV) exposure, " states t... » read more

Ultranarrow Semiconductor WS2 Nanoribbon FETs (Chalmers)
By Technical Paper Link - 29 Jan, 2025 - Comments: 0

A new technical paper titled "Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors" was published by researchers at Chalmers University of Technology. Abstract "Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancem... » read more

Controlling Speckle Contrast Using Existing Lithographic Scanner Knobs to Understand LWR (Samsung, ASML)
By Technical Paper Link - 29 Jan, 2025 - Comments: 0

A new technical paper titled "Controlling Speckle Contrast Using Existing Lithographic Scanner Knobs to Explore the Impact on Line Width Roughness" was published by researchers at Samsung, ASML and Sungkyunkwan University. Abstract "Local critical dimension uniformity (LCDU) or line width roughness (LWR) is increasingly important in argon fluoride (ArF) immersion lithography systems (scanne... » read more

3D Integration And Test Results From TSV-Processed Chips (CERN et al.)
By Technical Paper Link - 20 Jan, 2025 - Comments: 0

A new technical paper titled "3D integration of pixel readout chips using Through-Silicon-Vias" was published by researchers at CERN, IZM Fraunhofer and University of Geneva. Abstract "Particle tracking and imaging detectors are becoming increasingly complex, driven by demands for densely integrated functionality and maximal sensitive area. These challenging requirements can be met using 3D... » read more

Schottky Barrier Transistors: Status, Challenges and Modeling Tools
By Technical Paper Link - 08 Jan, 2025 - Comments: 0

A technical paper titled "Roadmap for Schottky barrier transistors" was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. Abstract "In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as an asset for device functio... » read more

2D Ferroelectric Field-Effect Transistors (Penn State, U. of Minnesota)
By Technical Paper Link - 30 Dec, 2024 - Comments: 0

A new technical paper titled "Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures" was published by researchers at Penn State University and University of Minnesota. Abstract "Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly... » read more

Advancements in SOT-MRAM Device Development (imec)
By Technical Paper Link - 28 Dec, 2024 - Comments: 0

A technical paper titled "Recent progress in spin-orbit torque magnetic random-access memory" was recently published by imec. Abstract "Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review rece... » read more

Ammonia Plasma Surface Treatment for Improved Cu–Cu Bonding Reliability
By Technical Paper Link - 27 Dec, 2024 - Comments: 0

A new technical paper titled "Ammonia Plasma Surface Treatment for Enhanced Cu–Cu Bonding Reliability for Advanced Packaging Interconnection" was published by researchers at Myongji University. Abstract "With the emergence of 3D stacked semiconductor products, such as high-bandwidth memory, bonding-interface reliability cannot be overemphasized. The condition of the surface interface befo... » read more

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