Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition (Penn State, et al.)


A new technical paper titled "In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition" was published by researchers at Pennsylvania State University, Cornell University, Argonne National Lab, Georgia Tech and Forschungsverbund Berlin. Abstract "The drive toward non-von Neumann device architectures has led to an intense focus on ins... » read more

High-NA EUVL: Automated Defect Inspection Based on SEMI-SuperYOLO-NAS


A new technical paper titled "Towards Improved Semiconductor Defect Inspection for high-NA EUVL based on SEMI-SuperYOLO-NAS" was published by researchers at KU Leuven, imec, Ghent University, and SCREEN SPE. Abstract "Due to potential pitch reduction, the semiconductor industry is adopting High-NA EUVL technology. However, its low depth of focus presents challenges for High Volume Manufac... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors


A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

2D van der Waals Magnets Above Room Temperature (MIT)


A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond


A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

Superconducting Qubits Made Using Industry-Standard, Advanced Semiconductor Manufacturing (imec, KU Leuven)


A new technical paper titled "High-coherence superconducting qubits made using industry-standard, advanced semiconductor manufacturing" was published by researchers at imec and KU Leuven. Abstract: "The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the ... » read more

U.S. Strategy on Microelectronics Research


The U.S. government released a 61 page report titled "National Strategy on Microelectronics Research" by the Subcommittee On Microelectronics Leadership, Committee on Homeland and National Security of the National Science and Technology Council. The report states four goals guiding the agency's efforts in microelectronics research: "Goal 1. Enable and accelerate research advances for futu... » read more

Band-To-Band Tunneling And Negative Differential Resistance in Heterojunctions Built Entirely Using 2D Materials


A technical paper titled "Electrical characterization of multi-gated WSe2 /MoS2 van der Waals heterojunctions" was published by researchers at Helmholtz-Zentrum Dresden Rossendorf (HZDR), TU Dresden, National Institute for Materials Science (Japan) and NaMLab gGmbH. Abstract "Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the pr... » read more

Environmental Impact of Semiconductor Manufacturing (ORNL)


A  technical paper titled "Cleaner Chips: Decarbonization in Semiconductor Manufacturing" was published by researchers at Oak Ridge National Laboratory (ORNL) / UT-Battelle. Abstract: "The growth of the information and communication technology sector has vastly accelerated in recent decades because of advancements in digitalization and Artificial Intelligence (AI). Scope 1, 2, and 3 gree... » read more

UCIe-3D: SiP Architectures With Advanced 3D Packaging With Shrinking Bump Pitches (Intel)


A technical paper titled “High-performance, power-efficient three-dimensional system-in-package designs with universal chiplet interconnect express” was published by researchers at Intel. Abstract: "Universal chiplet interconnect express (UCIe) is an open industry standard interconnect for a chiplet ecosystem in which chiplets from multiple suppliers can be packaged together. The UCIe 1.0... » read more

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