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Tailoring spatial entropy in EUV focused beams for multispectral ptychography


The Advanced Research Center for Nanolithography (ARCNL) and Vrije Universiteit Amsterdam have developed a new class of diffractive optical elements that paves the way towards more widespread use of EUV microscopy. Abstract "Diffractive optics can be used to accurately control optical wavefronts, even in situations where refractive components such as lenses are not available. For instance, c... » read more

Emergent magnetic monopoles isolated using quantum-annealing computer


Using D-Wave’s quantum-annealing computer, Los Alamos National Laboratory has shown that it’s possible to isolate magnetic monopoles. This research could one day enable future nanomagnets.   Abstract: "Artificial spin ices are frustrated spin systems that can be engineered, wherein fine tuning of geometry and topology has allowed the design and characterization of exotic eme... » read more

Ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing


Source: AIP Applied Physics Letters, published 2/4/2021.  Evelyn T. Breyer1,  Halid Mulaosmanovic1,  Thomas Mikolajick1,2, and  Stefan Slesazeck1 1Nanoelectronic Materials Laboratory (NaMLab) gGmbH, 01187 Dresden, Germany 2Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany   Technical paper link is here » read more

The Decadal Plan for Semiconductors


Semiconductor Research Corporation and Semiconductor Industry Association released the full Decadal Plan for Semiconductors: a roadmap, for 2030 and beyond. It’s a report that outlines chip research and funding priorities for the next decade. Find the Report Overview, Abridged Report and the Full Report here. » read more

Pressure-induced Anderson-Mott transition in elemental tellurium


Oliveira, J.F., Fontes, M.B., Moutinho, M. et al. Pressure-induced Anderson-Mott transition in elemental tellurium. Commun Mater 2, 1 (2021). https://doi.org/10.1038/s43246-020-00110-1 Abstract: "Elemental tellurium is a small band-gap semiconductor, which is always p-doped due to the natural occurrence of vacancies. Its chiral non-centrosymmetric structure, characterized by helical chains ... » read more

Design Comparison of SiC MOSFETs for Linear-Mode Operation


Source: US Army Research Lab Authors: Heather O'Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull August 2019 "Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as chan... » read more

Silicon CMOS Architecture For A Spin-based Quantum Computer


Source: UNSW Sydney Authors: M. Veldhorst (1,2),  H.G.J. Eenink (2,3) , C.H. Yang (2), and A.S. Dzurak (2) 1 Qutech, TU Delft, The Netherlands 2 Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications,UNSW, Sydney, Australia 3 NanoElectronics Group, MESA+ Institute for Nanotechnology,University of Twente, The Netherlands Te... » read more

Higher-Than-Ballistic Conduction of Viscous Electron Flows (MIT & Weizmann)


Source: Massachusetts Institute of Technology, Weizmann Institute of Science, Rehovot  Israel Haoyu Guo, Ekin Ilseven, Gregory Falkovich, Leonid Levitov "A new finding by physicists at MIT and in Israel shows that under certain specialized conditions, electrons can speed through a narrow opening in a piece of metal more easily than traditional theory says is possible. This “superball... » read more

Sub-Lithographic Patterning Via Tilted Ion Implantation For Scaling Beyond The 7nm Technology Node


Tilted ion implantation (TII) can be used in conjunction with pre-existing masking features on the surface of a substrate to form features with smaller dimensions and smaller pitch. In this paper, the resolution limit of this sub-lithographic patterning approach is examined via experiments as well as Monte Carlo process simulations. TII is shown to be capable of defining features with size belo... » read more