New Strategies For Enhancing Transport Properties of Conducting Polymers (Cambridge, et al.)


A new technical paper titled "Non-equilibrium transport in polymer mixed ionic–electronic conductors at ultrahigh charge densities" was published by researchers at Cambridge University, Grenoble Alpes University, CNRS, Humboldt-Universität zu Berlin, et al. Abstract "Conducting polymers are mixed ionic–electronic conductors that are emerging candidates for neuromorphic computing, bioel... » read more

ECTC 2024 Session Readout: Advancement of Metrology


A Electronic Components and Technology Conference (ECTC) session report titled "2024 ECTC Special Session Report: Advancing Metrology for Next-Generation Microelectronics" was published by NIST, Binghamton University, and TechSearch International. Abstract: "Metrology plays a pivotal role in semiconductor research, manufacturing, packaging and assembly. It is critical to the success of this... » read more

Analysis of the Errors of High-Fidelity Two-Qubit Gates in Silicon Quantum Dots (UNSW et al.)


A new technical paper titled "Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots" was published by researchers at UNSW, Diraq, Sandia National Laboratories, Keio University, Leibniz-Institut für Kristallzüchtung and others. Abstract "Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit syst... » read more

Buried Si/SiGe Interfaces Investigated Using Soft X-Ray Reflectometry and STEM-EDX


A new technical paper titled "Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy" was published by researchers at Physikalisch-Technische Bundesanstalt (PTB), imec, and Thermo Fisher Scientific Inc. The paper states: "A key element of semiconductor fabrication is the precise deposition of thin films. Among other... » read more

5 Novel Layout Design Methodologies For The 3nm Nanosheet FET Library (Samsung, KNU)


A new technical paper titled "Design Technology Co-Optimization and Time-Efficient Verification for Enhanced Pin Accessibility in the Post-3-nm Node" was published by researchers at Samsung Electronics and Kyungpook National University (KNU). Abstract: "As the technology nodes approach 3 nm and beyond, nanosheet FETs (NSFETs) are replacing FinFETs. However, despite the migration of devices ... » read more

The Impact Of Simulation On The Carbon Footprint of Wafer Fab Equipment R&D


A new technical paper titled "Achieving Sustainability in the Semiconductor Industry: The Impact of Simulation and AI" was published by researchers at Lam Research. Abstract "Computational simulation has been used in the semiconductor industry since the 1950s to provide engineers and managers with a faster, more cost-effective method of designing semiconductors. With increased pressure in t... » read more

Potential Of 2D Semi-Metallic PtSe2 As Source/Drain Contacts For 2D Material FETs


A technical paper titled “Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts” was published by researchers at Yonsei University, Korea Advanced Institute of Science and Technology (KAIST), Lincoln University College, Korea Institute of Science and Technology (KIST), and Ewha Womans University. Abstract: "In this ... » read more

Dual Graphite-Gated BLG As Platform for Cryogenic FETs


A technical paper titled “Ultra-steep slope cryogenic FETs based on bilayer graphene” was published by researchers at RWTH Aachen University, Forschungszentrum Julich, National Institute for Materials Science (Japan), and AMO GmbH. "Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slop... » read more

Flexible-Wafer Platform And CMOS-Compatible 300mm Wafer-Scale Integrated-Photonics Fabrication


A new technical paper titled "Mechanically-flexible wafer-scale integrated-photonics fabrication platform" was published by researchers at MIT and New York Center for Research, Economic Advancement, Technology, Engineering, and Science (NY CREATES). Abstract "The field of integrated photonics has advanced rapidly due to wafer-scale fabrication, with integrated-photonics platforms and fabric... » read more

Classification and Localization of Semiconductor Defect Classes in Aggressive Pitches (imec, Screen)


A new technical paper titled "An Evaluation of Continual Learning for Advanced Node Semiconductor Defect Inspection" was published by Imec and SCREEN SPE Germany. Abstract "Deep learning-based semiconductor defect inspection has gained traction in recent years, offering a powerful and versatile approach that provides high accuracy, adaptability, and efficiency in detecting and classifying... » read more

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