category: Materials

category: IoT, Security & Automotive

High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)
By Technical Paper Link - 01 Jul, 2025 - Comments: 0

A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

Viability of aZnMIm As A Resist For EUV Lithography (Johns Hopkins, Northwestern, Intel et al.)
By Technical Paper Link - 27 Jun, 2025 - Comments: 0

A new technical paper (preprint) titled "Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition" was published by researchers at Johns Hopkins University, Northwestern University, Intel Corporation, Bruker Nano, EUV Tech and Lawrence Berkeley National Lab. The paper states "This study demonstr... » read more

Device Architecture For 2D Material-Based mNS-FETs In Sub-1nm Nodes (Sungkyunkwan Univ., Alsemy)
By Technical Paper Link - 24 Jun, 2025 - Comments: 0

A new technical paper titled "Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes" was published by researchers at Sungkyunkwan University and Alsemy Inc. "This paper explores the design and optimization of multi-Nanosheet Field-Effect Transistors (mNS-FETs) employing a Transition Metal Dichalcogenide (TMDC) channel, specifically MoS2, for the 0.7 nm technology node u... » read more

Wafer Bonding Mechanisms Using SiCN Films For Hybrid Bonding Applications In 3D Integration 
By Technical Paper Link - 24 Jun, 2025 - Comments: 0

A new technical paper titled "Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration" was published by researchers at Yokohama National University, TEL, SK hynix, and University of Tsukuba. According to the paper: "Although much research has been conducted on wafer bonding methods compatible with the latest semiconductor manufacturing processes, discussions on the interface... » read more

Platform for LN-Based Wavelength-Scale Integrated Phononic Waveguides On Diamond (Stanford, UCSB)
By Technical Paper Link - 24 Jun, 2025 - Comments: 0

A new technical paper titled "Integrated phononic waveguide on thin-film lithium niobate on diamond" was published by researchers at Stanford University and UC Santa Barbara. Abstract "We demonstrate wavelength-scale phononic waveguides formed by transfer-printed thin-film lithium niobate (LN) on bulk diamond (LNOD), a material stack that combines the strong piezoelectricity of LN with the ... » read more

Analytical Methods For Analyzing PFAS In Semiconductor Wastewater (Oregon State University)
By Technical Paper Link - 24 Jun, 2025 - Comments: 0

A new technical paper titled "Practical Guidance on Selecting Analytical Methods for PFAS in Semiconductor Manufacturing Wastewater" was published by researchers at Oregon State University, Corvallis. Abstract "The focus of this review is to provide an overview of the nomenclature, structure, and properties of perfluoroalkyl and polyfluoroalkyl substances (PFAS) that dictate the selection o... » read more

Thermoelectricity in Topological Flat-Band Compounds (TU Wien, et al.)
By Technical Paper Link - 18 Jun, 2025 - Comments: 0

A new technical paper titled "Topological Flat-Band-Driven Metallic Thermoelectricity" was published by researchers at TU Wien, Los Alamos National Lab, Flatiron Institute and others. Abstract "Materials where flattened electronic dispersions arise from destructive phase interference, rather than localized orbitals, have emerged as promising platforms for studying emergent quantum phenome... » read more

PCM-Based IMC Technology: Overview Of Materials, Device Physics, Design and Fabrication (IBM Research-Europe)
By Technical Paper Link - 09 Jun, 2025 - Comments: 0

A new technical paper titled "Phase-Change Memory for In-Memory Computing" was published by researchers at IBM Research-Europe. "We review the current state of phase-change materials, PCM device physics, and the design and fabrication of PCM-based IMC chips. We also provide an overview of the application landscape and offer insights into future developments," states the paper. Find the te... » read more

Vertically Stacked ZnO/Te CFETs (POSTECH, Mokpo)
By Technical Paper Link - 09 Jun, 2025 - Comments: 0

A new technical paper titled "Demonstration of Vertically Stacked ZnO/Te Complementary Field-Effect Transistor" was published by researchers at POSTECH and Mokpo National University. Abstract "The complementary field-effect transistor (CFET) structure is a highly area-efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recr... » read more

Integration of High-Density Polymer Waveguides With Silicon Photonics for CPO (imec, Ghent)
By Technical Paper Link - 03 Jun, 2025 - Comments: 0

A technical paper titled "Low-Loss Integration of High-Density Polymer Waveguides with Silicon Photonics for Co-Packaged Optics" was published by researchers at imec and Ghent University. Abstract "Co-Packaged Optics applications require scalable and high-yield optical interfacing solutions to silicon photonic chiplets, offering low-loss, broadband, and polarization-independent optical coup... » read more

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