2D-Materials-Based Electronic Circuits (KAUST and TSMC)


A special edition article titled "Electronic Circuits made of 2D Materials" was just published by Dr. Mario Lanza, KAUST Associate Professor of Material Science and Engineering, and Iuliana Radu, corporate researcher at TSMC. This special issue covers 21 articles from leading subject matter experts, ranging from materials synthesis and their integration in micro/nano-electronic devices and c... » read more

Rubbery Schottky Diodes Based on Soft, Stretchy Electronic Materials (Penn State)


A new technical paper titled "Fully rubbery Schottky diode and integrated devices" was published by researchers at Penn State University. The Office of Naval Research and the National Science Foundation funded this research. "Here, we report a fully rubbery Schottky diode constructed all based on stretchable electronic materials, including a liquid metal cathode, a rubbery semiconductor, and... » read more

Fabricating FeFET Devices with Silicon-Doped Hafnium Oxide As A Ferroelectric Layer


A new technical paper titled "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications" was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg. Abstract (partial) "This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric... » read more

3D Structuring Inside GaAs by Ultrafast Laser Inscription


A new technical paper titled "Burst mode enabled ultrafast laser inscription inside gallium arsenide" was published by researchers at LP3 Laboratory in France, a joint research unit of Aix-Marseille University (AMU) and CNRS. "We investigate the possibility of using THzrepetition-rate burst mode for ULI inside GaAs, a material that cannot be internally processed with single femtosecond pulse... » read more

Phononic and Magnonic Properties of 1D MoI3 Nanowires


A new technical paper titled "Elemental excitations in MoI3 one-dimensional van der Waals nanowires" was published by researchers at NIST, UC Riverside, University of Georgia, Theiss Research Inc, and Stanford University. "We described here the elemental excitations in crystals of MoI3 a vdW [van der Waals] material with a true-1D crystal structure. Our measurements reveal anomalous temperat... » read more

Opportunities and Challenges for Carbon Nanotube Transistors


A new technical review paper titled "Carbon nanotube transistors: Making electronics from molecules" was published by researchers at Duke University, Northwestern University, and Stanford University. “Between the opportunities in high-performance digital logic with the potential for 3D integration and the possibilities for printed and even recyclable thin-film electronics, CNT transistors ... » read more

New Method For Determining How 2D Materials Expand (MIT)


A new technical paper titled "A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers" was published by researchers at MIT and Southern University of Science and Technology (China). "A new technique that accurately measures how atom-thin materials expand when heated could help engineers develop faster, more powerful electronic... » read more

New Material for Printing At the Nanoscale, Strong & Light (Stanford/Northwestern)


A new technical paper titled "Mechanical nanolattices printed using nanocluster-based photoresists" was published by researchers at Stanford University and Northwestern University. The researchers have developed a new material for nanoscale 3D printing to be used for drones, microelectronics and satellites, demonstrating that "the new material is able to absorb twice as much energy than othe... » read more

Stabilizing A Hafnium Oxide-Based Thin Film When Sandwiched Between A Metal Substrate And An Electrode


A technical paper titled "Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films" was published by researchers at University of Virginia, Brown University, Sandia National Labs, and Oak Ridge National Lab. Funding was given by U.S. DOE's 3D Ferroelectric Microelectronics Energy Frontier Research Center and the SRC. "This study ... » read more

Using More Germanium In Chips for Energy Efficiency & Achievable Clock Frequencies


A new technical paper titled "Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts" was published by researchers at TU Wien (Vienna University of Technology), Johannes Kepler University, CEA-LETI, and Swiss Federal Laboratories for Materials Science and Technology. Find the technical paper here. Published September 2022. Abstrac... » read more

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