2D Materials Roadmap: Current And Future Challenges, Solutions


A new technical paper titled "The 2D Materials Roadmap" was published by researchers at many institutions including Chinese Academy of Sciences, TU Denmark, Pennsylvania State University, University of Manchester, University of Cambridge et al. Abstract "Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of th... » read more

Scalable Approach For Fabricating Sub-10nm Nanogaps


A new technical paper titled "A progressive wafer scale approach for Sub-10 nm nanogap structures" was published by researchers at Seoul National University, Chung-Ang University, Mohammed VI Polytechnic University and Ulsan National Institute of Science and Technology. "We have advanced the atomic layer lithography method into an efficient, scalable approach for fabricating sub-10 nm nanoga... » read more

Thermal Slip Length at a L/S Interface: Power Law Relations From Spatial and Frequency Attributes of the Contact Layer (Caltech)


A new technical paper titled "Thermal Slip Length at a Liquid/Solid Interface: Power Law Relations From Spatial and Frequency Attributes of the Contact Layer" was published by researchers at California Institute of Technology, , T. J. Watson Sr. Laboratories of Applied Physics. Abstract "Specialty integrated chips for power intensive tasks like artificial intelligence generate so much heat ... » read more

Strategies For Reducing The Effective GaN/Diamond TBR


A new technical paper titled "Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications" was published by researchers at University of Bristol, Cardiff University and Akash Systems. Abstract "GaN high electron mobility transistors (HEMTs) on SiC substrates are the highest performing commercially available transistors for high-power, hi... » read more

HW Implementation Of An ONN Coupled By A ReRAM Crossbar Array (IBM, TU Eindhoven)


A new technical paper titled "Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory Tasks" was published by researchers at IBM Research Europe and Eindhoven University of Technology. Abstract "We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. ... » read more

Potential of AOS Memories As A High-Performance SRAM Substitute (Georgia Tech, U. of Virginia)


A new technical paper titled "Optimization and Benchmarking of Monolithically Stackable Gain Cell Memory for Last-Level Cache" was published by researchers at Georgia Institute of Technology and University of Virginia. Abstract: "The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low oper... » read more

EFO Errors In The Wire-Bonding Semiconductor Packaging Process


A new technical paper titled "A Comparative Study on Various Au Wire Rinse Compositions and Their Effects on the Electronic Flame-Off Errors of Wire-Bonding Semiconductor Package" was published by researchers at Hanbat National University, Seoul National University and Chungnam National University. The paper states: "In this study, we identify the origin of electronic flame-off (EFO) erro... » read more

Design Optimization Techniques To Improve NC-CFET Performance


A new technical paper titled "Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This work assesses and analyzes negative-capacitance CFETs (NC-CFETs) with metal-ferroelectric-insulator-semiconductor (MFIS) and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) configu... » read more

Synthesis Of An Ultrathin Vanadium Dioxide Film On A Flexible Substrate, Preserving Film’s Electrical Properties


A new technical paper titled "Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior" was published by researchers at Osaka University and National Institute for Materials Science. Abstract "We report on the preparation of vanadium dioxide (VO2) ul... » read more

Low-Temp Pressure-Assisted Liquid-Metal Printing for Oxide-TFTs


A new technical paper titled "Low-temperature pressure-assisted liquid-metal printing for β-Ga2O3 thin-film transistors" was published by researchers at UCSD and National Tsing Hua University. Abstract "Developing a low-temperature and cost-effective manufacturing process for energy-efficient and high-performance oxide-thin-film transistors (TFTs) is a crucial step toward advanci... » read more

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