category: Materials

category: IoT, Security & Automotive

Design of strongly nonlinear graphene nanoelectromechanical systems in quantum regime
By Technical Paper Link - 10 Jan, 2022 - Comments: 0

ABSTRACT "We report on the analysis and design of atomically thin graphene resonant nanoelectromechanical systems (NEMS) that can be engineered to exhibit anharmonicity in the quantum regime. Analysis of graphene two-dimensional (2D) NEMS resonators suggests that with device lateral size scaled down to ∼10–30 nm, restoring force due to the third-order (Duffing) stiffness in graphene NE... » read more

Spin–orbit torque engineering in β-W/CoFeB heterostructures with W–Ta or W–V alloy layers between β-W and CoFeB
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduce... » read more

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation o... » read more

A Review on the Fabrication and Reliability of Three-Dimensional Integration Technologies for Microelectronic Packaging: Through-Si-via and Solder Bumping Process
By Technical Paper Link - 23 Dec, 2021 - Comments: 0

Abstract "With the continuous miniaturization of electronic devices and the upcoming new technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation cellular networks (5G), etc., the electronics industry is achieving high-speed, high-performance, and high-density electronic packaging. Three-dimensional (3D) Si-chip stacking using through-Si-via (TSV) and sol... » read more

A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials
By Technical Paper Link - 23 Dec, 2021 - Comments: 0

Abstract "The main motivation of this review is to study the evolution of first and second level of interconnect materials used in memory device semiconductor packaging. Evolutions of bonding wires from gold (Au) to silver (Ag) or copper (Cu) have been reported and studied in previous literatures for low-cost solution, but Au wire still gives highest rating in terms of the performance of tempe... » read more

Revealing the Effect of Nanoscopic Design on the Charge Carrier Separation Processes in Semiconductor-Metal Nanoparticle Gel Networks
By Technical Paper Link - 22 Dec, 2021 - Comments: 0

Abstract: "In this paper, it is shown that the nanoscopic design of combining semiconductors and noble metals has a direct impact on the macroscopic (electrochemical) properties of their assembled, hyperbranched, macroscopic gel networks. Controlled and arbitrary deposition of gold domains on CdSe/CdS nanorods leads to tipped and randomly decorated heteroparticles, respectively. Structur... » read more

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots
By Technical Paper Link - 21 Dec, 2021 - Comments: 0

Abstract: "Realization of fully solid-state white light emitting devices requires high efficiency blue, green, and red emitters. However, challenges remain in boosting the low quantum efficiency of long wavelength group-III-nitride light emitters through conventional quantum well growth. Here, we demonstrate a new direct metal–organic chemical vapor deposition approach to grow In-rich InGa... » read more

The Role of InGaN Quantum Barriers in Improving the Performance of GaN-based Laser Diodes
By Technical Paper Link - 21 Dec, 2021 - Comments: 0

Abstract: "In this work, different aspects which have influences on device performance of blue laser diodes (LDs) when using InGaN instead of GaN as quantum barrier (QB) layers are investigated theoretically and experimentally. In the modeling calculation, it is found that the threshold current of LDs with InGaN QB layers is reduced obviously, but the slope efficiency is not largely improved... » read more

Crystal Phase Control during Epitaxial Hybridization of III-V Semiconductors with Silicon
By Technical Paper Link - 21 Dec, 2021 - Comments: 0

Abstract: "The formation and propagation of anti-phase boundaries (APBs) in the epitaxial growth of III-V semiconductors on Silicon is still the subject of great debate, despite the impressive number of studies focusing on this topic in the last past decades. The control of the layer phase is of major importance for the future realization of photonic integrated circuits that include efficien... » read more

Identification of two-dimensional layered dielectrics from first principles
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract "To realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition to vdW channel materials. We study the dielectric properties of 32 exfoliable vdW materials using first principles methods. We calculate the static and optical dielectric constants and discover a large out-of-plane permittivity in GeClF, PbClF, LaOBr, and LaOCl, while the in-plane permittiv... » read more

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