The device performance of LDs with InGaN QB layers is improved significantly in comparison with LDs with GaN QB layers.
Abstract:
“In this work, different aspects which have influences on device performance of blue laser diodes (LDs) when using InGaN instead of GaN as quantum barrier (QB) layers are investigated theoretically and experimentally. In the modeling calculation, it is found that the threshold current of LDs with InGaN QB layers is reduced obviously, but the slope efficiency is not largely improved due to the increase of leakage current. However, in the experimental results of the fabricated LDs using InGaN QB layers in comparison with those with GaN QB layers, the slope efficiency is really improved greatly, which is 34% higher. The great improvement of emission efficiency is ascribed to the better homogeneity of the active region which can improve the peak mode gain effectively. Such a better homogeneity of QW layers can be mainly attributed to the decreased composition pulling effect and a suppression of the stress between InGaN QB layers and InGaN QW layers.”
View this technical paper here. Published 09/2021.
Ben, Y., Liang, F., Zhao, D., Yang, J., Liu, Z., & Chen, P. (2022). The role of Ingan quantum barriers in improving the performance of gan-based laser diodes. Optics & Laser Technology, 145, 107523.
Sensor technologies are still evolving, and capabilities are being debated.
Academia, industry partnerships ramp to entice undergrads into hardware engineering.
Pitches continue to decrease, but new tooling and technologies are required.
Issues involving design, manufacturing, packaging, and observability all need to be solved before this approach goes mainstream for many applications.
Buried features and re-entrant geometries drive application-specific metrology solutions.
Technology and business issues mean it won’t replace EUV, but photonics, biotech and other markets provide plenty of room for growth.
While terms often are used interchangeably, they are very different technologies with different challenges.
Commercial chiplet marketplaces are still on the distant horizon, but companies are getting an early start with more limited partnerships.
Existing tools can be used for RISC-V, but they may not be the most effective or efficient. What else is needed?
Sensor technologies are still evolving, and capabilities are being debated.
The industry is gaining ground in understanding how aging affects reliability, but more variables make it harder to fix.
Key pivot and innovation points in semiconductor manufacturing.
Tools become more specific for Si/SiGe stacks, 3D NAND, and bonded wafer pairs.
Leave a Reply