中文 English

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots


Abstract: "Realization of fully solid-state white light emitting devices requires high efficiency blue, green, and red emitters. However, challenges remain in boosting the low quantum efficiency of long wavelength group-III-nitride light emitters through conventional quantum well growth. Here, we demonstrate a new direct metal–organic chemical vapor deposition approach to grow In-rich InGa... » read more

The Role of InGaN Quantum Barriers in Improving the Performance of GaN-based Laser Diodes


Abstract: "In this work, different aspects which have influences on device performance of blue laser diodes (LDs) when using InGaN instead of GaN as quantum barrier (QB) layers are investigated theoretically and experimentally. In the modeling calculation, it is found that the threshold current of LDs with InGaN QB layers is reduced obviously, but the slope efficiency is not largely improved... » read more

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content


Abstract "InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narro... » read more

MicroLEDs Moving From Lab to Fab


Every disruptive technology has its "aha" moment — the time when everyone from engineers to investors realizes that, yes, this technology is the real deal and it won’t be scrapped on the R&D floor. For many, it was Samsung’s recent announcement of a 110-inch microLED TV that irrevocably put microLEDs on the map. The TV’s price is $155,000, but as with most consumer electronics th... » read more