A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National Laboratory. Abstract: "GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-perfor... » read more

MicroLEDs Move Toward Commercialization

The market for MicroLED displays is heating up, fueled by a raft of innovations in design and manufacturing that can increase yield and reduce prices, making them competitive with LCD and OLED devices. MicroLED displays are brighter and higher contrast than their predecessors, and they are more efficient. Functional prototypes have been developed for watches, AR glasses, TVs, signage, and au... » read more

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

Abstract: "Realization of fully solid-state white light emitting devices requires high efficiency blue, green, and red emitters. However, challenges remain in boosting the low quantum efficiency of long wavelength group-III-nitride light emitters through conventional quantum well growth. Here, we demonstrate a new direct metal–organic chemical vapor deposition approach to grow In-rich InGa... » read more

The Role of InGaN Quantum Barriers in Improving the Performance of GaN-based Laser Diodes

Abstract: "In this work, different aspects which have influences on device performance of blue laser diodes (LDs) when using InGaN instead of GaN as quantum barrier (QB) layers are investigated theoretically and experimentally. In the modeling calculation, it is found that the threshold current of LDs with InGaN QB layers is reduced obviously, but the slope efficiency is not largely improved... » read more

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

Abstract "InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narro... » read more

MicroLEDs Moving From Lab to Fab

Every disruptive technology has its "aha" moment — the time when everyone from engineers to investors realizes that, yes, this technology is the real deal and it won’t be scrapped on the R&D floor. For many, it was Samsung’s recent announcement of a 110-inch microLED TV that irrevocably put microLEDs on the map. The TV’s price is $155,000, but as with most consumer electronics th... » read more