Ultranarrow Semiconductor WS2 Nanoribbon FETs (Chalmers)


A new technical paper titled "Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors" was published by researchers at Chalmers University of Technology. Abstract "Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancem... » read more

Electronic and Transport Properties of Six TMD Heterostructures


A new technical paper titled "Computational Assessment of I–V Curves and Tunability of 2D Semiconductor van der Waals Heterostructures" was published by researchers at Chalmers University of Technology. Abstract "Two-dimensional (2D) transition metal dichalcogenides (TMDs) have received significant interest for use in tunnel field-effect transistors (TFETs) due to their ultrathin layers... » read more

3D Integration And Test Results From TSV-Processed Chips (CERN et al.)


A new technical paper titled "3D integration of pixel readout chips using Through-Silicon-Vias" was published by researchers at CERN, IZM Fraunhofer and University of Geneva. Abstract "Particle tracking and imaging detectors are becoming increasingly complex, driven by demands for densely integrated functionality and maximal sensitive area. These challenging requirements can be met using 3D... » read more

Liquid-Infused Nanostructured Composites As A Universal Thermal Interface Solution for Cooling Applications


A new technical paper titled "Liquid-infused nanostructured composite as a high-performance thermal interface material for effective cooling" was published by researchers at Carnegie Mellon University, Oregon State University and Arieca. Abstract "Effective heat dissipation remains a grand challenge for energy-dense devices and systems. As heterogeneous integration becomes increasingly inev... » read more

Vertical AlGaN Heterostructures For Integrated Photonics


A new technical paper titled "AlGaN/AlN heterostructures: an emerging platform for integrated photonics" was published by researchers at Humboldt-Universität zu Berlin and Ferdinand-Braun-Institut (FBH). Abstract "We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfig... » read more

Loss Processes in Electrochemically Charged Semiconductor Nanocrystal Films (TU Delft)


A new technical paper titled "Where Do the Electrons Go? Studying Loss Processes in the Electrochemical Charging of Semiconductor Nanomaterials" was published by researchers at Delft University of Technology. Abstract "Electrochemical charging of films of semiconductor nanocrystals (NCs) allows precise control over their Fermi level and opens up new possibilities for use of semiconductor NC... » read more

Domain Wall Fluctuations in Sliding Ferroelectrics (Cambridge, Argonne)


A new technical paper titled "Superconductivity from Domain Wall Fluctuations in Sliding Ferroelectrics" was published by researchers at University of Cambridge and Argonne National Lab. Abstract: "Bilayers of two-dimensional van der Waals materials that lack an inversion center can show a novel form of ferroelectricity, where certain stacking arrangements of the two layers lead to an inter... » read more

Transformation Of Polarons As Tellurene Becomes Thinner


A new research paper titled "Thickness-dependent polaron crossover in tellurene" was published by researchers from Rice University, Lawrence Berkeley National Laboratory, MIT, Argonne National Laboratory, ORNL, Purdue University, and Stanford University. Abstract "Polarons, quasiparticles from electron-phonon coupling, are crucial for material properties including high-temperature supercond... » read more

Schottky Barrier Transistors: Status, Challenges and Modeling Tools


A technical paper titled "Roadmap for Schottky barrier transistors" was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. Abstract "In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as an asset for device functio... » read more

2D Ferroelectric Field-Effect Transistors (Penn State, U. of Minnesota)


A new technical paper titled "Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures" was published by researchers at Penn State University and University of Minnesota. Abstract "Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly... » read more

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