Physics-Based Digital Twin of a Thermally Aged Flip-Chip Package (TU Delft, NXP)


A technical paper titled “Modelling thermomechanical degradation of moulded electronic packages using physics-based digital twin” was published by researchers at Delft University of Technology and NXP Semiconductors. Abstract: "Semiconductor devices are commonly encapsulated with Epoxy-based Moulding Compounds (EMC) to form an electronic package. EMC typically occupies a large volume with... » read more

Properties of Commercially Available Hexagonal Boron Nitride Grown By The CVD Method


A new technical paper titled "On the quality of commercial chemical vapour deposited hexagonal boron nitride" was published by researchers at KAUST and the National Institute for Materials Science in Japan. Abstract "The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with sm... » read more

Imperceptible, Lightweight Sensors Directly Printed on Biological Surfaces


A new technical paper titled "Imperceptible augmentation of living systems with organic bioelectronic fibres" was published by researchers at University of Cambridge and University of Macau. Abstract "The functional and sensory augmentation of living structures, such as human skin and plant epidermis, with electronics can be used to create platforms for health management and environmental m... » read more

GaN Devices: Properties and Performance At Extremely High Temperatures


A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

Ferroelectric Memory-Based IMC for ML Workloads


A new technical paper titled "Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads" was published by researchers at Purdue University. Abstract "This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate mach... » read more

Tweaking Isotopes In Thin Semiconductor Materials Can Influence Optical And Electronic Properties 


A technical paper titled “Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor” was published by researchers at Oak Ridge National Laboratory (ORNL) and University of Central Florida. Abstract: "Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, ... » read more

Materials And Technologies For High Temperature, Resilient Electronics


A technical paper titled “Materials for High Temperature Digital Electronics” was published by researchers at University of Pennsylvania, Air Force Research Laboratory, and Ozark Integrated Circuits. Abstract: "Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio... » read more

Synthesis Of Goldene Comprising Single-Atom Layer Gold (Linköping University)


A technical paper titled “Synthesis of goldene comprising single-atom layer gold” was published by researchers at Linköping University (Sweden). Abstract: "The synthesis of monolayer gold has so far been limited to free-standing several-atoms-thick layers, or monolayers confined on or inside templates. Here we report the exfoliation of single-atom-thick gold achieved through wet-chemical... » read more

Ultra Energy-Efficient HW Platform For Neuromorphic Computing Enabled By 2D-TMD Tunnel-FETs (UC Santa Barbara)


A technical paper titled “An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs” was published by researchers at the University of California Santa Barbara. Abstract: "Brain-like energy-efficient computing has remained elusive for neuromorphic (NM) circuits and hardware platform implementations despite decades of research. In this work we rev... » read more

A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED


A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National Laboratory. Abstract: "GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-perfor... » read more

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