category: Materials

category: IoT, Security & Automotive

Metrology For 2D Materials: A Review From The International Roadmap For Devices And Systems (NIST, Et Al.)
By Technical Paper Link - 30 Apr, 2024 - Comments: 0

A technical paper titled “Metrology for 2D materials: a perspective review from the international roadmap for devices and systems” was published by researchers at Arizona State University, IBM Research, Unity-SC, and the National Institute of Standards and Technology (NIST). Abstract: "The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into h... » read more

Memristor Crossbar Architecture for Encryption, Decryption and More
By Technical Paper Link - 16 Apr, 2024 - Comments: 0

A new technical paper titled "Tunable stochastic memristors for energy-efficient encryption and computing" was published by researchers at Seoul National University, Sandia National Laboratories, Texas A&M University and Applied Materials. Abstract "Information security and computing, two critical technological challenges for post-digital computation, pose opposing requirement... » read more

Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition (Penn State, et al.)
By Technical Paper Link - 16 Apr, 2024 - Comments: 0

A new technical paper titled "In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition" was published by researchers at Pennsylvania State University, Cornell University, Argonne National Lab, Georgia Tech and Forschungsverbund Berlin. Abstract "The drive toward non-von Neumann device architectures has led to an intense focus on ins... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

3-Channel Package-Scale Galvanic Isolation Interface for SiC and GaN Power Switching Converters
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "A Three-Channel Package-Scale Galvanic Isolation Interface for Wide Bandgap Gate Drivers" was published by STMicroelectronics and DIEEI, Università di Catania. Abstract "This article presents the design of a three-channel package-scale galvanic isolation interface for SiC and GaN power switching converters. The isolation interface consists of two side-by-sid... » read more

2D van der Waals Magnets Above Room Temperature (MIT)
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

Hybrid All-Optical Switching Devices Combining Silicon Nanocavities And 2D Semiconductor Material
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "Hybrid silicon all-optical switching devices integrated with two-dimensional material" was published by researchers at RIKEN, National Institute of Advanced Industrial Science and Technology (AIST), and Keio University. Abstract "We propose and demonstrate hybrid all-optical switching devices that combine silicon nanocavities and two-dimensional semiconduct... » read more

High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

Electrically Controlled All-AFM Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance (Northwestern)
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance" was published by researchers at Northwestern University, Universitat Jaume, California State University Northridge, Argonne National Lab, Politecnico diBari, and University of Messina. Abstract "Antiferromagnetic (AFM) materials are a pathway... » read more

HW Implementation of Memristive ANNs
By Technical Paper Link - 22 Mar, 2024 - Comments: 0

A new technical paper titled "Hardware implementation of memristor-based artificial neural networks" was published by KAUST, Universitat Autònoma de Barcelona, IBM Research, USC, University of Michigan and others. Abstract: "Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units oper... » read more

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