Modulated Electron Microscopy Applied In The Process Monitoring Of Memory Cell And The Defect Inspection Of Floating Circuits


A technical paper titled “In situ electrical property quantification of memory devices by modulated electron microscopy” was published by researchers at Hitachi High-Tech Corporation, KIOXIA Corporation, and Western Digital. Abstract: "E-beam inspection based on voltage-contrast (VC) defect metrology has been widely utilized for failure mode analysis of memory devices. Variation in e-beam... » read more

Improving The Retention Characteristics Of 3D NAND Flash Memories


A technical paper titled “3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer” was published by researchers at Myongji University, Soongsil University, and Seoul National University. Abstract: "To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeat... » read more

Discovering Orbital Multiferroicity in Pentalayer Rhombohedral Graphene (MIT)


A technical paper titled “Orbital Multiferroicity in Pentalayer Rhombohedral Graphene” was published by researchers at Massachusetts Institute of Technology. Abstract (partial): "Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-fu... » read more

FeFET Multi-Level Cells For In-Memory Computing In 28nm


A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of Technology Kanpur, Fraunhofer IPMS, RPTU Kaiserslautern-Landau, and Technical University of Munich. Abstract: "Advancements in AI led to the emergence of in-memory-computing architectures as a... » read more

Scalable And Compact Multi-Bit CAM Designs Using FeFETs


A technical paper titled “SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search” was published by researchers at Zhejiang University, China, Georgia Institute of Technology, University of California Irvine, Rochester Institute of Technology, University of Notre Dame, and Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of ... » read more

Novel NVM Devices and Applications (UC Berkeley)


A dissertation titled “Novel Non-Volatile Memory Devices and Applications” was submitted by a researcher at University of California Berkeley. Abstract Excerpt "This dissertation focuses on novel non-volatile memory devices and their applications. First, logic MEM switches are demonstrated to be operable as NV memory devices using controlled welding and unwelding of the contacting electro... » read more

Design Optimization Of Split-Gate NOR Flash For Compute-In-Memory


A technical paper titled “Design Strategies of 40 nm Split-Gate NOR Flash Memory Device for Low-Power Compute-in-Memory Applications” was published by researchers at Seoul National University of Science and Technology and University of Seoul. Abstract: "The existing von Neumann architecture for artificial intelligence (AI) computations suffers from excessive power consumption and memo... » read more

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design


A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

A Hierarchical Instruction Cache Tailored To Ultra-Low-Power Tightly-Coupled Processor Clusters


A technical paper titled “Scalable Hierarchical Instruction Cache for Ultra-Low-Power Processors Clusters” was published by researchers at University of Bologna, ETH Zurich, and GreenWaves Technologies. Abstract: "High Performance and Energy Efficiency are critical requirements for Internet of Things (IoT) end-nodes. Exploiting tightly-coupled clusters of programmable processors (CMPs) ha... » read more

DRAM Simulator For Evaluation of Memory System Design Changes (ETH Zurich)


A technical paper titled “Ramulator 2.0: A Modern, Modular, and Extensible DRAM Simulator” was published by researchers at ETH Zurich. Abstract: "We present Ramulator 2.0, a highly modular and extensible DRAM simulator that enables rapid and agile implementation and evaluation of design changes in the memory controller and DRAM to meet the increasing research effort in improving the perfo... » read more

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