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category: Transistors

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The development of integrated circuits based on two-dimensional materials
By Technical Paper Link - 23 Nov, 2021 - Comments: 0

Abstract Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices and simple circuits—in some cases with performance superior to those of silicon-based circuits—reports on the fabrication of integrated circuits using 2D materials are limited and the creation of large-scale circu... » read more

Standards for the Characterization of Endurance in Resistive Switching Devices
By Technical Paper Link - 03 Nov, 2021 - Comments: 0

Abstract "Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to... » read more

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities
By Technical Paper Link - 12 Oct, 2021 - Comments: 0

Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT)
By Technical Paper Link - 03 Sep, 2021 - Comments: 0

Abstract: "This paper proposes an ultra-scaled memory device, called `Dynamic Flash Memory (DFM)'. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F2 cell can be achieved. Similar to DRAM [1], refresh is needed, but high speed block refresh can improve the duty ratio. Analogous to Flash [2], three fundamental operations of “0” Erase, “1” Program, and Read are nee... » read more

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
By Technical Paper Link - 28 Aug, 2021 - Comments: 0

Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669. Find technical paper here. Abstract "In this paper, to solve the epitaxial thickness limit and the high in... » read more

High-performance flexible nanoscale transistors based on transition metal dichalcogenides
By Technical Paper Link - 24 Aug, 2021 - Comments: 0

Read the paper here. Published June 17, 2021, Nature Electronics. Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advan... » read more

A Natively Flexible 32-bit Arm Microprocessor
By Technical Paper Link - 21 Jul, 2021 - Comments: 0

Read the full paper here. Published in Nature. Abstract "Nearly 50 years ago, Intel created the world’s first commercially produced microprocessor—the 4004, a modest 4-bit CPU (central processing unit) with 2,300 transistors fabricated using 10 μm process technology in silicon and capable only of simple arithmetic calculations. Since this ground-breaking achievement, there has been conti... » read more

Ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing
By Technical Paper Link - 21 Apr, 2021 - Comments: 0

Source: AIP Applied Physics Letters, published 2/4/2021.  Evelyn T. Breyer1,  Halid Mulaosmanovic1,  Thomas Mikolajick1,2, and  Stefan Slesazeck1 1Nanoelectronic Materials Laboratory (NaMLab) gGmbH, 01187 Dresden, Germany 2Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany   Technical paper link is here » read more

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots
By Technical Paper Link - 11 Jan, 2021 - Comments: 0

Researchers at Los Alamos National Laboratory and University of California Irvine used quantum dots to create transistors which can be assembled into functional logic circuits. “Potential applications of the new approach to electronic devices based on non-toxic quantum dots include printable circuits, flexible displays, lab-on-a-chip diagnostics, wearable devices, medical testing, smart im... » read more

A Ferroelectric Semiconductor Field-Effect Transistor
By Technical Paper Link - 31 Dec, 2019 - Comments: 0

Abstract: "Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric sem... » read more

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