Monolithic 3D TFT Integration at Room Temperature, Used to Stack 10 Vertical Layers


A new technical paper titled "Three-dimensional integrated metal-oxide transistors" was published by researchers at KAUST (King Abdullah University of Science and Technology). Abstract "The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the develo... » read more

Power Electronic Packaging for Discrete Dies


A technical paper titled “Substrate Embedded Power Electronics Packaging for Silicon Carbide MOSFETs” was published by researchers at University of Cambridge, University of Warwick, Chongqing University, and SpaceX. Abstract: "This paper proposes a new power electronic packaging for discrete dies, namely Standard Cell which consists of a step-etched active metal brazed (AMB) substrate and... » read more

Device Characteristics of GAA-Structured CMOS and CTFET Under Varying Temperatures


A new technical paper titled "Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application" was published by researchers at National Tsing Hua University and National United University in Taiwan. Abstract "Tunneling field effect transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal oxide semiconductor ... » read more

GaN Devices: Properties and Performance At Extremely High Temperatures


A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

Ferroelectric Memory-Based IMC for ML Workloads


A new technical paper titled "Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads" was published by researchers at Purdue University. Abstract "This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate mach... » read more

Demonstrating The Feasibility Of The Foundry Model For Flexible Thin-Film Electronics 


A technical paper titled “Multi-project wafers for flexible thin-film electronics by independent foundries” was published by researchers at KU Leuven and imec. Abstract: "Flexible and large-area electronics rely on thin-film transistors (TFTs) to make displays, large-area image sensors, microprocessors, wearable healthcare patches, digital microfluidics and more. Although silicon-based co... » read more

Controllable Interaction Between Two Hole Spin Qubits In A Conventional Silicon Transistor


A technical paper titled “Anisotropic exchange interaction of two hole-spin qubits” was published by researchers at University of Basel and IBM Research Europe-Zurich. Abstract: "Semiconductor spin qubits offer the potential to employ industrial transistor technology to produce large-scale quantum computers. Silicon hole spin qubits benefit from fast all-electrical qubit control and sweet... » read more

Ultra Energy-Efficient HW Platform For Neuromorphic Computing Enabled By 2D-TMD Tunnel-FETs (UC Santa Barbara)


A technical paper titled “An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs” was published by researchers at the University of California Santa Barbara. Abstract: "Brain-like energy-efficient computing has remained elusive for neuromorphic (NM) circuits and hardware platform implementations despite decades of research. In this work we rev... » read more

Single-Molecule Transistor Using Quantum Interference


A new technical paper titled "Quantum interference enhances the performance of single-molecule transistors" was published by researchers at Queen Mary University of London, University of Oxford, Lancaster University, and University of Waterloo. Abstract "Quantum effects in nanoscale electronic devices promise to lead to new types of functionality not achievable using classical electronic co... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors


A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

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