category: Transistors

category: IoT, Security & Automotive

Stacking Persistent Embedded Memories Based On Oxide Transistors Upon GPGPU Platforms (Georgia Tech)
By Technical Paper Link - 01 Jul, 2025 - Comments: 0

A new technical paper titled "CMOS+X: Stacking Persistent Embedded Memories based on Oxide Transistors upon GPGPU Platforms" was published by Georgia Tech. Abstract "In contemporary general-purpose graphics processing units (GPGPUs), the continued increase in raw arithmetic throughput is constrained by the capabilities of the register file (single-cycle) and last-level cache (high bandwidth... » read more

High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)
By Technical Paper Link - 01 Jul, 2025 - Comments: 0

A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

Patterned MW-NSFETs For Sustainable Scaling (POSTECH)
By Technical Paper Link - 28 Jun, 2025 - Comments: 0

A new technical paper titled "Patterned Multi-Wall Nanosheet FETs for Sustainable Scaling: Zero Gate Extension With Minimal Gate Cut Width" was published by researchers at POSTECH. Abstract "In nanosheet field-effect transistors (NSFETs), the scaling of the cell height (CH) is constrained by strict design rules related to gate extension (GE), gate cut (GC), and device-to-device distance. ... » read more

Device Architecture For 2D Material-Based mNS-FETs In Sub-1nm Nodes (Sungkyunkwan Univ., Alsemy)
By Technical Paper Link - 24 Jun, 2025 - Comments: 0

A new technical paper titled "Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes" was published by researchers at Sungkyunkwan University and Alsemy Inc. "This paper explores the design and optimization of multi-Nanosheet Field-Effect Transistors (mNS-FETs) employing a Transition Metal Dichalcogenide (TMDC) channel, specifically MoS2, for the 0.7 nm technology node u... » read more

Wafer Bonding Mechanisms Using SiCN Films For Hybrid Bonding Applications In 3D Integration 
By Technical Paper Link - 24 Jun, 2025 - Comments: 0

A new technical paper titled "Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration" was published by researchers at Yokohama National University, TEL, SK hynix, and University of Tsukuba. According to the paper: "Although much research has been conducted on wafer bonding methods compatible with the latest semiconductor manufacturing processes, discussions on the interface... » read more

Review Paper: Wafer-Scale Accelerators Versus GPUs (UC Riverside)
By Technical Paper Link - 18 Jun, 2025 - Comments: 0

A new technical paper titled "Performance, efficiency, and cost analysis of wafer-scale AI accelerators vs. single-chip GPUs" was published by researchers at UC Riverside. "This review compares wafer-scale AI accelerators and single-chip GPUs, examining performance, energy efficiency, and cost in high-performance AI applications. It highlights enabling technologies like TSMC’s chip-on-wafe... » read more

Vertically Stacked ZnO/Te CFETs (POSTECH, Mokpo)
By Technical Paper Link - 09 Jun, 2025 - Comments: 0

A new technical paper titled "Demonstration of Vertically Stacked ZnO/Te Complementary Field-Effect Transistor" was published by researchers at POSTECH and Mokpo National University. Abstract "The complementary field-effect transistor (CFET) structure is a highly area-efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recr... » read more

SRAM Cell Scaling With Monolithic 3D Integration Of 2D FETs (Penn State)
By Technical Paper Link - 01 Jun, 2025 - Comments: 0

A new technical paper titled "Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors" was published by researchers at The Pennsylvania State University. Abstract "Static Random-Access Memory (SRAM) cells are fundamental in computer architecture, serving crucial roles in cache memory, buffers, and registers due to their high-speed perf... » read more

Electrical Properties of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts (NYCU)
By Technical Paper Link - 31 May, 2025 - Comments: 0

A new technical paper titled "Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) MoS2 devices through density-functional-theory (DFT) calculation and device simulation. We begin by ana... » read more

Doping Mechanism Of Pure Nitric Oxide In Tungsten Diselenide Transistors (Purdue, MIT, NYCU)
By Technical Paper Link - 22 May, 2025 - Comments: 0

A technical paper titled "Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors" was published by researchers at Purdue University, MIT and National Yang Ming Chiao Tung University (with support from Intel Corporation). "Atomically thin two-dimensional (2D) semiconductors are promising candidates for beyond-silicon electronic devices. However, an excessi... » read more

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