category: Transistors

category: IoT, Security & Automotive

Single-Molecule Transistor Using Quantum Interference
By Technical Paper Link - 16 Apr, 2024 - Comments: 0

A new technical paper titled "Quantum interference enhances the performance of single-molecule transistors" was published by researchers at Queen Mary University of London, University of Oxford, Lancaster University, and University of Waterloo. Abstract "Quantum effects in nanoscale electronic devices promise to lead to new types of functionality not achievable using classical electronic co... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

HW Implementation of Memristive ANNs
By Technical Paper Link - 22 Mar, 2024 - Comments: 0

A new technical paper titled "Hardware implementation of memristor-based artificial neural networks" was published by KAUST, Universitat Autònoma de Barcelona, IBM Research, USC, University of Michigan and others. Abstract: "Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units oper... » read more

Band-To-Band Tunneling And Negative Differential Resistance in Heterojunctions Built Entirely Using 2D Materials
By Technical Paper Link - 15 Mar, 2024 - Comments: 0

A technical paper titled "Electrical characterization of multi-gated WSe2 /MoS2 van der Waals heterojunctions" was published by researchers at Helmholtz-Zentrum Dresden Rossendorf (HZDR), TU Dresden, National Institute for Materials Science (Japan) and NaMLab gGmbH. Abstract "Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the pr... » read more

Ultra-Low Power CiM Design For Practical Edge Scenarios
By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET” was published by researchers at Zhejiang University, University of Notre Dame, Technical University of Munich, Munich Institute of Robotics and Machine Intelligence, and the Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of Zhejiang Province. Abstract: "Compute... » read more

Directly Writing and Rewriting Photonic Chips on Low-Loss Phase-Change Thin Films
By Technical Paper Link - 15 Feb, 2024 - Comments: 0

A technical paper titled “Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films” was published by researchers at University of Washington, University of Maryland, and Tianjin University. Abstract: "Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technolo... » read more

Guidelines For A Single-Nanometer Magnetic Tunnel Junction (MTJ)
By Technical Paper Link - 06 Feb, 2024 - Comments: 0

A technical paper titled “Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities” was published by researchers at Tohoku University, Université de Lorraine, and Inamori Research Institute for Science. Abstract: "Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements is critical for future electronics with spin-... » read more

Suitability of FeFET-Based CAM Cells For Storage-Class Memory, Under Junction Temperature Variations
By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility” was published by researchers at Fraunhofer Institute for Photonic Microsystems (IPMS) and Indian Institute of Technology Madras (IIT Madras). Abstract: "Hafnium oxide (HfO2)-based ferroelectric fiel... » read more

A Potentially CMOS Compatible Integration Of Reconfigurable FETs Based On Al-Si-Al Heterostructure Sheets
By Technical Paper Link - 11 Jan, 2024 - Comments: 0

A technical paper titled “Reconfigurable Si Field-Effect Transistors With Symmetric On-States Enabling Adaptive Complementary and Combinational Logic” was published by researchers at TU Vienna and Swiss Federal Laboratories for Materials Science and Technology. Abstract: "Reconfigurable field-effect transistors (RFETs), combining n-and p-type operation in a single device, have already sho... » read more

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