Ultra-Low Power CiM Design For Practical Edge Scenarios

A technical paper titled “Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET” was published by researchers at Zhejiang University, University of Notre Dame, Technical University of Munich, Munich Institute of Robotics and Machine Intelligence, and the Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of Zhejiang Province. Abstract: "Compute... » read more

Directly Writing and Rewriting Photonic Chips on Low-Loss Phase-Change Thin Films

A technical paper titled “Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films” was published by researchers at University of Washington, University of Maryland, and Tianjin University. Abstract: "Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technolo... » read more

Guidelines For A Single-Nanometer Magnetic Tunnel Junction (MTJ)

A technical paper titled “Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities” was published by researchers at Tohoku University, Université de Lorraine, and Inamori Research Institute for Science. Abstract: "Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements is critical for future electronics with spin-... » read more

Suitability of FeFET-Based CAM Cells For Storage-Class Memory, Under Junction Temperature Variations

A technical paper titled “Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility” was published by researchers at Fraunhofer Institute for Photonic Microsystems (IPMS) and Indian Institute of Technology Madras (IIT Madras). Abstract: "Hafnium oxide (HfO2)-based ferroelectric fiel... » read more

A Potentially CMOS Compatible Integration Of Reconfigurable FETs Based On Al-Si-Al Heterostructure Sheets

A technical paper titled “Reconfigurable Si Field-Effect Transistors With Symmetric On-States Enabling Adaptive Complementary and Combinational Logic” was published by researchers at TU Vienna and Swiss Federal Laboratories for Materials Science and Technology. Abstract: "Reconfigurable field-effect transistors (RFETs), combining n-and p-type operation in a single device, have already sho... » read more

Summary Of The Progress In Beta-Phase Gallium Oxide Field-Effect Transistors

A technical paper titled “Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications” was published by researchers at George Mason University and National Institute of Standards and Technology (NIST). Abstract: "Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is exp... » read more

8-In-1 Reconfigurable Logic Gate (TU Dresden)

A technical paper titled “The RGATE: an 8-in-1 Polymorphic Logic Gate Built from Reconfigurable Field Effect Transistors” was published by researchers at TU Dresden and NaMLab. Abstract: "We present the hardware implementation of a reconfigurable universal logic gate, that we call RGATE, able to deliver up to eight different logic functionalities and based on a symmetric four-transistors... » read more

Rapid Prototyping For Emerging Semiconductor Devices

A technical paper titled “Generating Predictive Models for Emerging Semiconductor Devices” was published by researchers at TU Darmstadt and NaMLab. Abstract: "Circuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred. However, for emerging device concepts with altered ... » read more

Quantum Confinement And Its Effect On The Thermoelectric Performance For Thermal Management

A technical paper titled “Enhanced thermoelectric performance via quantum confinement in a metal oxide semiconductor field effect transistor for thermal management” was published by researchers at Sandia National Laboratories and Kansas State University. Abstract: "The performance of thermoelectric devices is gauged by the dimensionless figure of merit ZT. Improving ZT has proven to be a ... » read more

Nanoscale Reconfigurable Si Transistors (TU Wien, CNRS, UNC)

A new technical paper titled "Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi-Wire Channels" was published by researchers at TU Wien, CNRS, and University of North Carolina at Chapel Hill. Abstract: "In this work, bottom-up Al–Si–Al nanowire (NW) heterostructures are presented, which act as a prototype vehicle toward top-down fabricated nanosheet (NS) and ... » read more

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