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Large-Scale VFETs With Ultra-Short Channel Length And High Performance

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A new technical paper titled “Large-scale sub-5-nm vertical transistors by van der Waals integration” was published by researchers at Hunan University.

Here, we demonstrate a layer-by-layer transfer process of large-scale indium gallium zinc oxide (IGZO) semiconductor arrays and metal electrodes, and realize large-scale VFETs with ultra-short channel length and high device performance,” states the paper.

Find the technical paper here. Published September 2024.

Yang, X., He, R., Lu, Z. et al. Large-scale sub-5-nm vertical transistors by van der Waals integration. Nat Commun 15, 7676 (2024). https://doi.org/10.1038/s41467-024-52150-7.

 



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