Band-To-Band Tunneling And Negative Differential Resistance in Heterojunctions Built Entirely Using 2D Materials


A technical paper titled "Electrical characterization of multi-gated WSe2 /MoS2 van der Waals heterojunctions" was published by researchers at Helmholtz-Zentrum Dresden Rossendorf (HZDR), TU Dresden, National Institute for Materials Science (Japan) and NaMLab gGmbH. Abstract "Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the pr... » read more

Research Bits: Feb. 27


Phonon-magnon reservoir Researchers from TU Dortmund, Loughborough University, V. E. Lashkaryov Institute of Semiconductor Physics, and University of Nottingham were inspired by the human eye to propose an on-chip phonon-magnon reservoir for neuromorphic computing. In reservoir computing, input signals are mapped into a multidimensional space, which is not trained and only expedites recogni... » read more

New Metasurface Architecture To Deliver Ultrafast Information Processing And Versatile Terahertz Sources


A technical paper titled “Light-driven nanoscale vectorial currents” was published by researchers at Los Alamos National Laboratory, Menlo Systems, University of California Davis, Columbia University, Sandia National Laboratories, and Intellectual Ventures. Abstract: "Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and informa... » read more

Heterogeneous Integration of Graphene and Hafnium Oxide Memristors Using Pulsed-Laser Deposition


A technical paper titled “Heterogeneous Integration of Graphene and HfO2 Memristors” was published by researchers at Forschungszentrum Jülich, Jožef Stefan Institute, and Jülich-Aachen Research Alliance (JARA-FIT). Abstract: "The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electro... » read more

Research Bits: Jan. 8


High mobility graphene Researchers at the Georgia Institute of Technology and Tianjin University created a functional semiconductor made from graphene that is compatible with conventional microelectronics processing methods. "We now have an extremely robust graphene semiconductor with 10 times the mobility of silicon, and which also has unique properties not available in silicon," said Walt... » read more

A Polymer-Free Technique For Assembling Van Der Waals Heterostructures Using Flexible Si Nitride Membranes


A technical paper titled “Clean assembly of van der Waals heterostructures using silicon nitride membranes” was published by researchers at University of Manchester, Imperial College London, National Institute for Materials Science (Japan), and University of Lancaster. Abstract Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional mater... » read more

Research Bits: November 21


MoS2 in-memory processor Researchers from École Polytechnique Fédérale de Lausanne (EPFL) developed a large-scale in-memory processor using the 2D semiconductor material, molybdenum disulfide (MoS2), for the channel material in the more than 1,000 transistors that comprise the processor. The MoS2-based in-memory processor is dedicated to vector-matrix multiplication, key for digital signal ... » read more

Discovering Orbital Multiferroicity in Pentalayer Rhombohedral Graphene (MIT)


A technical paper titled “Orbital Multiferroicity in Pentalayer Rhombohedral Graphene” was published by researchers at Massachusetts Institute of Technology. Abstract (partial): "Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-fu... » read more

Friction Between Single Layer Graphene And An Atomic Force Microscope Tip


A technical paper titled “Dynamically tuning friction at the graphene interface using the field effect” was published by researchers at University of Illinois Urbana-Champaign and University of California Irvine. Abstract: "Dynamically controlling friction in micro- and nanoscale devices is possible using applied electrical bias between contacting surfaces, but this can also induce unwant... » read more

Wafer-Scale CMOS-Integrated GFET Arrays With High Yield And Uniformity Designed For Biosensing Applications


A technical paper titled “Wafer-Scale Graphene Field-Effect Transistor Biosensor Arrays with Monolithic CMOS Readout” was published by researchers at VTT Technical Research Centre of Finland and Graphenea Semiconductor SLU. Abstract: "The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single-analyte detection toward multiplex... » read more

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