Research Bits: May 5


AI power prediction Researchers from MIT and the MIT-IBM Watson AI Lab developed a prediction tool that can quickly tell data center operators how much power will be consumed by running a particular AI workload on a certain processor or AI accelerator chip. It can be applied to a wide range of hardware configurations. The lightweight estimation model captures the power usage pattern of a GP... » read more

Minimizing Optical Loss While Enabling Efficient Phase Modulation in TMD-Based Devices (Nanyang Technological Univ., et al.)


A new technical paper titled "Hybrid tungsten oxyselenide/graphene electrodes for near-lossless 2D semiconductor phase modulators" was published by researchers at Nanyang Technological University, CNRS-International-NTU-Thales Research Alliance (CINTRA), University of Chicago, University of Wisconsin-Madison, Chungnam National University, National Institute for Materials Science, MIT, and Singa... » read more

Thermal Scanning-Probe Lithography in vdW Heterostructures (Technical University of Denmark)


A new technical paper titled "Gradient Electronic Landscapes in van der Waals Heterostructures" was published by researchers at Technical University of Denmark. Abstract Excerpt "Here, we use thermal scanning-probe lithography to produce smooth topographic landscapes in vdW heterostructures by patterning the thickness of the top hBN flake with nanometer precision." Find the technical p... » read more

The Race To Replace Silicon


For over 75 years, silicon has been the dominant material in the evolution of modern electronics, powering everything from smartphones to satellites. But as chipmakers push toward smaller nodes, higher power efficiency, and quantum-scale precision, a pressing question is echoing across fabs and R&D labs worldwide: Is it time to move beyond silicon? In this blog post, we explore the growi... » read more

Research Bits: June 9


InGaOx GAA transistor Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving transistor reliability. "We wanted our crystalline oxide transistor to feature a 'gate-all-around' structure, whereby the gate, which turns the current on or off, surrounds t... » read more

Research Bits: May 6


Destroying hydrogen peroxide and triazole Researchers from the University of Technology Sydney and startup Infinite Water International developed catalytic technology that breaks down hydrogen peroxide and triazole, two chemicals used in semiconductor manufacturing for surface cleaning and corrosion prevention. The goal is to create a cleaner wastewater stream that can be reused within the fab... » read more

2D Materials Roadmap: Current And Future Challenges, Solutions


A new technical paper titled "The 2D Materials Roadmap" was published by researchers at many institutions including Chinese Academy of Sciences, TU Denmark, Pennsylvania State University, University of Manchester, University of Cambridge et al. Abstract "Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of th... » read more

Promising Materials Beyond Silicon (TI, AIXTRON, imec)


A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

Scalable Fabrication of Graphene FETs on Non-Planar Surfaces (Imperial College London)


A new technical paper titled "Fabrication of graphene field effect transistors on complex non-planar surfaces" was published by researchers at Imperial College London. Abstract "Graphene field effect transistors (GFETs) are promising devices for biochemical sensing. Integrating GFETs onto complex non-planar surfaces could uncap their potential in emerging areas of wearable electronics, such... » read more

Large-Scale VFETs With Ultra-Short Channel Length And High Performance


A new technical paper titled "Large-scale sub-5-nm vertical transistors by van der Waals integration" was published by researchers at Hunan University. "Here, we demonstrate a layer-by-layer transfer process of large-scale indium gallium zinc oxide (IGZO) semiconductor arrays and metal electrodes, and realize large-scale VFETs with ultra-short channel length and high device performance," sta... » read more

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