2D UltraLow Temperatures, High Performance Quantum


A new technical paper titled “Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures” was published by researchers at EPFL and National Institute for Materials Science (Japan).


“The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K−1 T−1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena.”

Find the technical paper here and the EPFL news release here. Published July 2024.

Pasquale, G., Sun, Z., Migliato Marega, G. et al. Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures. Nat. Nanotechnol. (2024). https://doi.org/10.1038/s41565-024-01717-y

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