tag: National Institute for Materials Science

Chip Industry Technical Paper Roundup: July 16
By Linda Christensen - 16 Jul, 2024 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library. [table id=244 /] More ReadingTechnical Paper Library home   » read more

2D UltraLow Temperatures, High Performance Quantum
By Technical Paper Link - 07 Jul, 2024 - Comments: 0

A new technical paper titled "Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures" was published by researchers at EPFL and National Institute for Materials Science (Japan). Abstract "The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. ... » read more

Chip Industry Technical Paper Roundup: June 10
By Linda Christensen - 10 Jun, 2024 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=232 /] More ReadingTechnical Paper Library home » read more

Properties of Commercially Available Hexagonal Boron Nitride Grown By The CVD Method
By Technical Paper Link - 29 May, 2024 - Comments: 0

A new technical paper titled "On the quality of commercial chemical vapour deposited hexagonal boron nitride" was published by researchers at KAUST and the National Institute for Materials Science in Japan. Abstract "The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with sm... » read more

Research Bits: May 7
By Jesse Allen - 07 May, 2024 - Comments: 0

High-temperature memory Researchers from the University of Pennsylvania and Air Force Research Laboratory demonstrated memory technology capable of enduring temperatures as high as 600° Celsius for more than 60 hours while retaining stability and reliability. The non-volatile memory device consists of a metal–insulator–metal structure, incorporating nickel and platinum electrodes with a 4... » read more

Chip Industry Technical Paper Roundup: April 23
By Linda Christensen - 23 Apr, 2024 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library. [table id=216 /] Find last week’s technical paper additions here. » read more

Research Bits: April 16
By Jesse Allen - 16 Apr, 2024 - Comments: 0

Tunable thermal conductivity in memristors Researchers from the Center for Research in Biological Chemistry and Molecular Materials (CiQUS) and Forschungszentrum Juelich discovered that oxide-based memristive devices can demonstrate tunable thermal conductivity. Alongside the memristor's electrical resistive switching, a thermal resistive switching effect also occurs at the metal-oxide inte... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

Chip Industry Technical Paper Roundup: April 8
By Linda Christensen - 08 Apr, 2024 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library. [table id=214 /] Find last week’s technical paper additions here. » read more

High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

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