Research Bits: Nov. 15


Low temperature 3D bonding Scientists from Osaka University developed a new method for the direct three-dimensional bonding of copper electrodes using silver layers. The method works at low temperatures and does not require external pressure. "Our process can be performed under gentle conditions, at relatively low temperatures and without added pressure, but the bonds were able to withstand... » read more

Research Bits: Oct. 4


2D electrode for ultra-thin semiconductors Researchers from the Korea Institute of Science and Technology (KIST), Japan's National Institute for Materials Science, and Kunsan National University designed two-dimensional semiconductor-based electronic and logic devices, with electrical properties that can be selectively controlled through a new 2D electrode material, chlorine-doped tin diseleni... » read more

Research Bits: Aug. 16


Protein-based circuits Researchers from North Carolina State University and University of Cambridge created self-assembled, protein-based circuits that can perform simple logic functions and take advantage of an electron’s properties at quantum scales. A challenge in creating molecular circuits is the unreliability as circuit size decreases. At the quantum scale, electrons behave like wav... » read more

Technical Paper Round-Up: July 18


New technical papers added to Semiconductor Engineering’s library this week. [table id=33 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit fo... » read more

Brightening Intrinsically Dark Material


New research paper titled "Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity," from researchers at Carl von Ossietzky University of Oldenburg (Germany), University of Iceland, the University of Würzburg (Germany), Friedrich Schiller University (Germany), Arizona State University (USA) and the National Institute for Materials Science in Tsukuba (Japan) a... » read more

Research Bits: May 31


Carbon nanotube transistors Researchers from the National Institute for Materials Science, National University of Science and Technology, Emanuel Institute of Biochemical Physics, Chinese Academy of Sciences, National Institute of Advanced Industrial Science and Technology, University of Tokyo, Tianjin University, and Queensland University of Technology created transistors out of carbon nanotu... » read more

Technical Paper Round-up: May 17


New technical papers added to Semiconductor Engineering’s library this week. [table id=27 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a go... » read more

Thinning of GaN-on-GaN HEMTs With A Laser Slicing Technique


New technical paper "Laser slice thinning of GaN-on-GaN high electron mobility transistors" from researchers at Nagoya University, Hamamatsu Photonics, and National Institute for Materials Science, Tsukuba. Abstract "As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In... » read more

Manufacturing Bits: Dec. 28


Measuring microdroplets The National Institute of Standards and Technology (NIST) has found a new way for microscopes to measure the volumes of microdroplets. Using this technique, NIST has measured the volume of individual droplets smaller than 100 trillionths of a liter with an uncertainty of less than 1%. That represents a tenfold improvement compared to previous measurements, according ... » read more

Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration


Abstract: "Carbon nanotubes have a helical structure wherein the chirality determines whether they are metallic or semiconducting. Using in situ transmission electron microscopy, we applied heating and mechanical strain to alter the local chirality and thereby control the electronic properties of individual single-wall carbon nanotubes. A transition trend toward a larger chiral angle region wa... » read more

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