Minimizing Optical Loss While Enabling Efficient Phase Modulation in TMD-Based Devices (Nanyang Technological Univ., et al.)


A new technical paper titled "Hybrid tungsten oxyselenide/graphene electrodes for near-lossless 2D semiconductor phase modulators" was published by researchers at Nanyang Technological University, CNRS-International-NTU-Thales Research Alliance (CINTRA), University of Chicago, University of Wisconsin-Madison, Chungnam National University, National Institute for Materials Science, MIT, and Singa... » read more

Chip Industry Technical Paper Roundup: Mar. 4


New technical papers recently added to Semiconductor Engineering’s library: [table id=410 /] Find more semiconductor research papers here. » read more

Synthesis Of An Ultrathin Vanadium Dioxide Film On A Flexible Substrate, Preserving Film’s Electrical Properties


A new technical paper titled "Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior" was published by researchers at Osaka University and National Institute for Materials Science. Abstract "We report on the preparation of vanadium dioxide (VO2) ul... » read more

Chip Industry Technical Paper Roundup: Oct. 29


New technical papers recently added to Semiconductor Engineering’s library: [table id=375 /] More Reading Chip Industry Week In Review Intel’s EU court win; high-NA benchmarks and new maskless litho; SiC down, GaN up; Natcast’s plan; Xiaomi’s 3nm chip; semi tax credit rules; RISC-V; lithium mine; AI-edge expansion. Technical Paper Library home » read more

Characterizing Defects Inside Hexagonal Boron Nitride (KAIST, NYU, et al.)


A new technical paper titled "Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors" was published by researchers at KAIST, NYU, Brookhaven National Laboratory, and National Institute for Materials Science. Abstract: "Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantu... » read more

Chip Industry Technical Paper Roundup: August 20


New technical papers recently added to Semiconductor Engineering’s library: [table id=252 /] More ReadingTechnical Paper Library home » read more

Dual Graphite-Gated BLG As Platform for Cryogenic FETs


A technical paper titled “Ultra-steep slope cryogenic FETs based on bilayer graphene” was published by researchers at RWTH Aachen University, Forschungszentrum Julich, National Institute for Materials Science (Japan), and AMO GmbH. "Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slop... » read more

Chip Industry Technical Paper Roundup: July 16


New technical papers recently added to Semiconductor Engineering’s library. [table id=244 /] More ReadingTechnical Paper Library home   » read more

2D UltraLow Temperatures, High Performance Quantum


A new technical paper titled "Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures" was published by researchers at EPFL and National Institute for Materials Science (Japan). Abstract "The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. ... » read more

Chip Industry Technical Paper Roundup: June 10


New technical papers added to Semiconductor Engineering’s library this week. [table id=232 /] More ReadingTechnical Paper Library home » read more

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