Chip Industry Technical Paper Roundup: June 10

Neuromorphic processors; RISC-V formal verification; GaN at high temps; thermal properties of system-on-foil; thermally aged flip-chip package; radar sensors; wearable sensors; CVD-grown hexagonal boron nitride.


New technical papers added to Semiconductor Engineering’s library this week.

Technical Paper Research Organizations
NeRTCAM: CAM-Based CMOS Implementation of Reference Frames for Neuromorphic Processors Carnegie Mellon University
Using Formal Verification to Evaluate Single Event Upsets in a RISC-V Core University of Southampton
High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology
Comparative Analysis of Thermal Properties in Molybdenum Substrate to Silicon and Glass for a System-on-Foil Integration Rochester Institute of Technology and Lux Semiconductors
Modelling thermomechanical degradation of moulded electronic packages using physics-based digital twin Delft University of Technology and NXP Semiconductors
On the quality of commercial chemical vapour deposited hexagonal boron nitride KAUST and the National Institute for Materials Science in Japan
CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications STMicroelectronics and University of Catania
Imperceptible augmentation of living systems with organic bioelectronic fibres University of Cambridge and University of Macau

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