Research Bits: August 29


Resistive switching with hafnium oxide Researchers from the University of Cambridge, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo used hafnium oxide to build a resistive switching memory device that processes data in a similar way as the synapses in the human brain. At the atomic level, hafnium oxide has no structure, with the hafni... » read more

Research Bits: July 24


Protons improve ferroelectric memory Researchers from King Abdullah University of Science and Technology (KAUST), Qingdao University, and Zhejiang University developed a method to produce multiple phase transitions in ferroelectric materials, which could increase storage capacity for neuromorphic memory. The approach uses proton-mediation of the ferroelectric material indium selenide. The r... » read more

Chip Industry’s Technical Paper Roundup: July 24


New technical papers recently added to Semiconductor Engineering’s library: [table id=119 /] More Reading Technical Paper Library home » read more

Gallium Oxide Flash Memory (KAUST & IIT)


A technical paper titled "Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics" was published by researchers at King Abdullah University of Science and Technology (KAUST) and Indian Institute of Technology. Abstract: "This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film... » read more

Chip Industry’s Technical Paper Roundup: Dec. 13


New technical papers added to Semiconductor Engineering’s library this week.[table id=70 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us po... » read more

2D-Materials-Based Electronic Circuits (KAUST and TSMC)


A special edition article titled "Electronic Circuits made of 2D Materials" was just published by Dr. Mario Lanza, KAUST Associate Professor of Material Science and Engineering, and Iuliana Radu, corporate researcher at TSMC. This special issue covers 21 articles from leading subject matter experts, ranging from materials synthesis and their integration in micro/nano-electronic devices and c... » read more

Power/Performance Bits: Feb. 15


3D printed piezoelectrics Researchers at University of Notre Dame and Purdue University developed a hybrid 3D printer that combines multi-material aerosol jet printing and extrusion printing, integrating both functional and structural materials into a single printing platform. They used it to create an all-printed piezoelectric wearable device. The stretchable piezoelectric sensors conform ... » read more

Power/Performance Bits: Dec. 28


Shrinking LEDs Researchers from King Abdullah University of Science and Technology (KAUST) are working to make LEDs smaller. Micrometer-scale light-emitting diodes (μLEDs) could be an ideal building block for future microLED displays, but devices based on nitride-based alloys used to achieve a broad color range become poor emitters of light when shrunk to micrometer scales. “The main ... » read more

The development of integrated circuits based on two-dimensional materials


Abstract Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices and simple circuits—in some cases with performance superior to those of silicon-based circuits—reports on the fabrication of integrated circuits using 2D materials are limited and the creation of large-scale circu... » read more

Power/Performance Bits: Nov. 16


Light-emitting memory Researchers from Kyushu University and National Taiwan Normal University propose a 'light-emitting memory' based on a perovskite that can simultaneously store and visually transmit data. The team used the idea in conjunction with resistive RAM (RRAM), in which states of high and low resistance represent ones and zeros. "The electrical measurements needed to check the r... » read more

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