A new technical paper titled “VVTEAM: A Compact Behavioral Model for Volatile Memristors” was published by researchers at Technion – Israel Institute of Technology.
Abstract
“Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and area. Additionally, volatile memristors are useful as selector devices and for hardware security circuits such as physical unclonable functions. To facilitate the design and simulation of circuits, a compact behavioral model is essential. This paper proposes V-VTEAM, a compact, simple, general, and flexible behavioral model for volatile memristors, inspired by the VTEAM nonvolatile memristor model and developed in MATLAB. The validity of the model is demonstrated by fitting it to an ion drift/diffusion-based Ag/SiOx/C/W volatile memristor, achieving a relative root mean error square of 4.5%.”
Find the technical paper here. September 2024.
Tanay Patni, Rishona Daniels, Shahar Kvatinsky: arXiv:2409.17723v1,
https://doi.org/10.48550/arXiv.2409.17723
Note from the paper: “This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessible.”
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