ESD Co-Design For 224G And 112G SerDes In FinFET Technologies


In addressing the challenges of enhancing ESD resilience for high-speed SerDes interfaces, it's crucial to ensure the implementation of appropriate ESD protection measures. This is particularly vital during the device's lifecycle from the conclusion of silicon wafer processing to system assembly, a phase during which electronic devices are highly susceptible to Electrostatic Discharge (ESD) dam... » read more

224G SerDes Trend and Solution


As an industry early mover to support the emerging 800G/1.6T networks, Cadence taped out the 224G-LR SerDes PHY IP on TSMC’s 3nm process at the beginning of the year and expects the silicon to arrive soon. The IP supports 1-225Gbps data rates with excellent BER at long reach (LR). The ever-increasing bandwidth requirement in hyperscale data centers is driving the rapid growth of high-speed I/... » read more