tag: FRAM

What Is Spin Torque MRAM?
By Mark LaPedus - 17 Aug, 2017 - Comments: 0

The memory market is going in several different directions at once. On one front, the traditional memory types, such as DRAM and flash, remain the workhorse technologies. Then, several vendors are readying the next-generation memory types. As part of an ongoing series, Semiconductor Engineering will explore where the new and traditional memory technologies are heading. For this segment, P... » read more

What Are FeFETs?
By Mark LaPedus - 16 Feb, 2017 - Comments: 1

The memory market is going in several different directions at once. On one front, the traditional memory types, such DRAM and flash, remain the workhorse technologies in systems despite undergoing some changes in the business. Then, several vendors are readying the next-generation memory types in the market. As part of an ongoing series, Semiconductor Engineering will explore where the new a... » read more

New Embedded Memories Ahead
By Mark LaPedus - 25 Jan, 2017 - Comments: 0

The embedded memory market is beginning to heat up, fueled by a new wave of microcontrollers (MCUs) and related chips that will likely require new and more capable nonvolatile memory types. The industry is moving on several different fronts in the embedded memory landscape. On one front, traditional solutions are advancing. On another front, several vendors are positioning the next-generatio... » read more

Foundries See Mixed Future
By Mark LaPedus - 21 Dec, 2016 - Comments: 1

Amid a tumultuous business environment, the silicon foundry industry is projected to see steady growth in a number of process segments in 2017. As in past years, the foundry market is expected to grow faster than the overall IC industry in 2017. But at the same time, the IC industry—the foundry customer base—continues to witness a frenetic wave of merger and acquisition activity. Basical... » read more

Drill Down: Embedded NVM Technology
By Ernest Worthman - 02 Apr, 2015 - Comments: 0

Many of the next-generation devices that will be seen on the IoT/E will have power, footprint, and electronic constraints as never before. Electronic flash memories (eFLASH), and their derivatives are seen as a realistic solution to many of these design constraints for small form factor and simple IoE devices. “NVM will be very important for the IoE from the perspective of saving power," ... » read more

IoT Will Force New Memory Paradigm
By Ernest Worthman - 05 Feb, 2015 - Comments: 1

There are two things in life that have always been true: One is that you can never be too rich, and second—at least since the dawn of the technological age—you can never have too much memory. But the memory truism is changing with the onset of the [getkc id="76" comment="Internet of Things"]. The next generation of memory for the IoT must meet a different set of metrics – smaller, smar... » read more

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