Speeding Down Memory Lane With Custom HBM


With the goal of increasing system performance per watt, the semiconductor industry is always seeking innovative solutions that go beyond the usual approaches of increasing memory capacity and data rates. Over the last decade, the High Bandwidth Memory (HBM) protocol has proven to be a popular choice for data center and high-performance computing (HPC) applications. Even more benefit can be rea... » read more

Research Bits: Mar. 10


Incipient ferroelectricity Researchers from Penn State University and the University of Minnesota propose harnessing incipient ferroelectricity in multifunctional two-dimensional FETs to create neuromorphic computer memory. Materials with incipient ferroelectricity have no stable ferroelectric order at room temperature and need certain conditions to achieve an electrical charge. The FETs were ... » read more

AI’s Rapid Growth: The Crucial Role Of High Bandwidth Memory


System efficiency is dictated by the performance of crucial components. For AI hardware systems, memory subsystem performance is the single most crucial component. In this blog post, we will provide an overview of the AI model landscape and the impact of HBM memory subsystems on effective system performance. AI models have grown from a few billions of parameters from the early '90s to today�... » read more

Optimizing Data Center TCO With CXL And Compression


In the ever-evolving landscape of data centers, Total Cost of Ownership (TCO) remains a critical metric. It encompasses all costs associated with data center infrastructure throughout its lifecycle, including initial purchase, installation, utilization, maintenance, energy consumption, and eventual replacement. By understanding and optimizing TCO, hyperscalers can make informed decisions that e... » read more

Research Bits: Feb. 10


Speeding up 3D NAND etch Researchers from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Laboratory (PPPL) investigated ways to speed up the cryogenic reactive ion etching process for 3D NAND by using a combined hydrogen fluoride gas to create the plasma. “Cryo etch with the hydrogen fluoride plasma showed a significant increase in the etching rate compared... » read more

Choosing The Right Memory Solution For AI Accelerators


To meet the increasing demands of AI workloads, memory solutions must deliver ever-increasing performance in bandwidth, capacity, and efficiency. From the training of massive large language models (LLMs) to efficient inference on endpoint devices, choosing the right memory technology is critical for chip designers. This blog explores three leading memory solutions—HBM, LPDDR, and GDDR—and t... » read more

Research Bits: Jan. 13


High-temp electrochemical memory Researchers from the University of Michigan and Sandia National Laboratory propose a nonvolatile electrochemical memory that can store and rewrite information at temperatures over 1100°F (600°C), enabling it to continue working in environments as extreme as the surface of Venus. Instead of transporting electrons, the memory moves oxygen ions between layere... » read more

Top Tech Videos Of 2024


In 2024, hot topics included challenges involving chiplets and heterogeneous integration, AI, data management, MCUs, power semis, software-defined vehicles, sensors, adaptive test, yield tracking, safety monitoring, security, and much more. Top 5 most watched videos in 2024: Overlay Optimization In Advanced IC Substrates How To Stop Row Hammer Attacks What’s Changing In DRAM ... » read more

Design And Verification Issues In 2024


At the end of each year, I look back over the stories published and those that top the charts in terms of readership. I concentrate on those stories that are about the EDA tools and flows and the factors that are influencing them. These are good indicators of the problems designers and verification teams are facing today, and where they are looking for answers. This year's leading categories... » read more

Baby Steps Toward 3D DRAM


Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But the equally important DRAM has achieved a similar manufacturable 3D architecture. The need for a sufficiently large means of storing charge — such as a capacitor — has proved elusive. Severa... » read more

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