Device Architecture For 2D Material-Based mNS-FETs In Sub-1nm Nodes (Sungkyunkwan Univ., Alsemy)


A new technical paper titled "Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes" was published by researchers at Sungkyunkwan University and Alsemy Inc. "This paper explores the design and optimization of multi-Nanosheet Field-Effect Transistors (mNS-FETs) employing a Transition Metal Dichalcogenide (TMDC) channel, specifically MoS2, for the 0.7 nm technology node u... » read more

Chip Industry Technical Paper Roundup: Sept. 24


New technical papers recently added to Semiconductor Engineering’s library: [table id=358 /] More ReadingTechnical Paper Library home » read more

Models for Both Strained and Unstrained GAA FETs Using Neural Networks


A new technical paper titled "Impact of Strain on Sub-3 nm Gate-all-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach" was published by researchers at Hanyang University and Alsemy Inc. Abstract "Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D... » read more