A technical paper titled "Impact of external magnetic fields on STT-MRAM" was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al.
Abstract
"This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of...
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