tag: BEOL

Front-End Technologies Are The New Back-End Tools: Using Picosecond Ultrasonics Technology For AI Packages, Part 1
By Cheolkyu Kim - 10 Jun, 2025 - Comments: 0

If you are a part of the semiconductor industry or simply someone interested in the field, you have likely heard what has become a common refrain: the back-end of the process is becoming more like the front-end of the process. In other words, the technologies that were once exclusively deployed in the first part of the process are being used to meet the increasingly stringent requirements of ad... » read more

Quantifying The PFAS Impact In ICs Manufacturing (Harvard University)
By Technical Paper Link - 03 Jun, 2025 - Comments: 0

A new technical paper titled "Modeling PFAS in Semiconductor Manufacturing to Quantify Trade-offs in Energy Efficiency and Environmental Impact of Computing Systems" was published by researchers at Harvard University and Mohamed Bin Zayed University of AI (MBZUAI). "The electronics and semiconductor industry is a prominent consumer of per- and poly-fluoroalkyl substances (PFAS), also known a... » read more

Novel Thin Film Growth Technique Of A WBG Sulfide Semiconductor in BEOL Compatible Conditions (USC, LBNL, TSMC)
By Technical Paper Link - 14 May, 2025 - Comments: 0

A new technical paper titled "Textured growth and electrical characterization of Zinc Sulfide on back-end-of-the-line (BEOL) compatible substrates" was published by researchers at USC, Lawrence Berkeley National Laboratory and TSMC. Abstract "Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing ... » read more

Thermal Analysis Of 3D Stacking And BEOL Technologies
By Mohamed Naeim - 10 Apr, 2025 - Comments: 0

Thermal challenges in 3D-IC designs can cause a significant risk in meeting performance specifications. While the pace of Moore’s Law has slowed in recent years, system technology co-optimization (STCO) promises to mitigate technology scaling bottlenecks with system architecture tuning based on emerging technology offerings, including 3D technology. AI-driven inference accelerators continu... » read more

3D Stacked Device Architecture Enabled By BEOL-Compatible Transistors (Stanford et al.)
By Technical Paper Link - 26 Feb, 2025 - Comments: 0

A new technical paper titled "Omni 3D: BEOL-Compatible 3-D Logic With Omnipresent Power, Signal, and Clock" was published by researchers at Stanford University, Intel Corporation and Carnegie Mellon University. Abstract "This article presents Omni 3D—a 3-D-stacked device architecture that is naturally enabled by back-end-of-line (BEOL)-compatible transistors. Omni 3D interleaves metal lay... » read more

Design-Space Analysis of M3D FPGA With BEOL Configuration Memories (Georgia Tech, UCLA)
By Technical Paper Link - 17 Jan, 2025 - Comments: 0

A new technical paper titled "Monolithic 3D FPGAs Utilizing Back-End-of-Line Configuration Memories" was published by researchers at Georgia Tech and UCLA. Abstract "This work presents a novel monolithic 3D (M3D) FPGA architecture that leverages stackable back-end-of-line (BEOL) transistors to implement configuration memory and pass gates, significantly improving area, latency, and power ef... » read more

3D Device With BEOL-Compatible Channel And Physical Design for Efficient Double-Side Routing
By Technical Paper Link - 17 Oct, 2024 - Comments: 0

A new technical paper titled "Omni 3D: BEOL-Compatible 3D Logic with Omnipresent Power, Signal, and Clock" was published by researchers at Stanford University, Intel Corporation, and Carnegie Mellon University. Abstract "This paper presents Omni 3D - a 3D-stacked device architecture that is naturally enabled by back-end-of-line (BEOL)-compatible transistors. Omni 3D arbitrarily interleaves ... » read more

Improving The Air-Stability and NBTI Reliability of BEOL CNFETs
By Technical Paper Link - 19 Sep, 2024 - Comments: 0

A new technical paper titled "Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors" was published by researchers at MIT, Stanford University, Carnegie Mellon University and Analog Devices. Abstract: "Back-end-of-line (BEOL) logic integration is emerging as a complementary scaling path to supplement front-end-of-line (FEOL) Silicon. Among ... » read more

Building CFETs With Monolithic And Sequential 3D
By Katherine Derbyshire - 22 Feb, 2024 - Comments: 0

Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, uses multiple channel layers to maintain the overall channel length and necessary drive current while continuing to reduce the standard cell footprint. The follow-on technology, the CFET, pushes... » read more

Impact of Scaling and BEOL Technology Solutions At The 7nm Node On MRAM
By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology. Abstract: "While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting the... » read more

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