tag: BEOL

Impact Of The Film Transfer And Grain Size On The Cu-barrier Properties Of 2D WS2 Films (NUS et al.)
By Technical Paper Link - 29 Jan, 2026 - Comments: 0

A new technical paper titled "Enhancing Cu-barrier properties of 2D-WS2 barriers: The role of grain size and surface passivation" was published by researchers at National University of Singapore, AIXTRON, IMiF and Applied Materials. Abstract "Two-dimensional (2D) films, such as tungsten disulfide (WS2), are being considered by the microelectronics industry as promising barrier and liner s... » read more

Overview of ALD-Driven Oxide Semiconductors for High Density, Low Power Memory Architectures (Hanyang Univ., imec)
By Technical Paper Link - 25 Jan, 2026 - Comments: 0

A new technical paper titled "Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges" was published by researchers a Hanyang University and imec. Abstract "Oxide semiconductors (OSs), introduced by the Hosono group in the early 2000s, have evolved from display backplane materials to promising candidates for advanced memory and logic ... » read more

Better Contact Resistance in Top-Gate CNFETs through Self-Aligned MoOx Nanoparticle Contact Doping (NYCU et al.)
By Technical Paper Link - 24 Jan, 2026 - Comments: 0

A new technical paper titled "Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx Nanoparticle Contact Doping" was published by researchers at National Yang Ming Chiao Tung University and National Center for Instrumentation Research. "Carbon nanotubes (CNTs) are promising candidates for next-generation back-end-of-line (BEOL) compatible devices due t... » read more

Research Bits: Dec. 16
By Jesse Allen - 16 Dec, 2025 - Comments: 0

Back-end integration Researchers from Massachusetts Institute of Technology (MIT) and the University of Waterloo propose a back-end integration platform that enables the fabrication of transistors and memory devices in a single compact stack on a chip. The approach uses amorphous indium oxide as the active channel layer of the back-end transistor. The properties of indium oxide allow a thin... » read more

Overcoming BEOL Patterning Challenges At The 3nm Node
By Assawer Soussou - 20 Nov, 2025 - Comments: 0

As complementary metal-oxide semiconductor (CMOS) area shrinks 50% from one node to the next, interconnect critical dimensions (CD) and pitch (or spacing) are under tight demands. At the N3 node, where metal pitch dimensions must be at or below 18 nm,1,2 one of the main interconnect challenges is securing sufficient process margins for CD and edge placement error (EPE). Achieving the... » read more

Comparative Analysis of CFET and NSFET Architectures (TU Munich, IIT)
By Technical Paper Link - 14 Nov, 2025 - Comments: 0

A new technical paper titled "Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET" was published by researchers at TU Munich and Indian Institute of Technology. Abstract "This work presents a comparative analysis of complementary field-effect transistor (CFET) and nanosheet FET (NSFET) architectures, with a focus on self-heating effects (SHEs), negative bias temperature ... » read more

Breaking The Copper Bottleneck With Molybdenum Hybrid Metallization
By Taeyeon Oh - 18 Sep, 2025 - Comments: 0

Scaling the back end of line (BEOL) in advanced semiconductor logic devices is a major challenge. Metal lines and via filling in BEOL have historically used copper (Cu) as the electrical conductor. But as device dimensions shrink, Cu use has become problematic. The small critical dimensions (CD) of the Cu metal lines and vias in the latest BEOL structures have created an increase in resistance,... » read more

Scheduling Architecture Integrated With M3D BEOL Memories For LLM Inference (Georgia Tech, Samsung)
By Technical Paper Link - 19 Aug, 2025 - Comments: 0

A new technical paper titled "Architecting Long-Context LLM Acceleration with Packing-Prefetch Scheduler and Ultra-Large Capacity On-Chip Memories" was published by researchers at Georgia Institute of Technology and Samsung. Abstract "Long-context Large Language Model (LLM) inference faces increasing compute bottlenecks as attention calculations scale with context length, primarily due to t... » read more

Using Picosecond Ultrasonic Technology For AI Packages: Part 2
By Cheolkyu Kim - 10 Jul, 2025 - Comments: 0

Heterogeneous integration is a key enabler of today’s AI innovations. By bringing together multiple chips with different functionalities, a.k.a., chiplets, AI devices have been able to achieve tremendous performance gains. However, the heterogeneous integration of advanced packages has its own set of process control obstacles that must be addressed, including new interconnect challenges invol... » read more

Stacking Persistent Embedded Memories Based On Oxide Transistors Upon GPGPU Platforms (Georgia Tech)
By Technical Paper Link - 01 Jul, 2025 - Comments: 0

A new technical paper titled "CMOS+X: Stacking Persistent Embedded Memories based on Oxide Transistors upon GPGPU Platforms" was published by Georgia Tech. Abstract "In contemporary general-purpose graphics processing units (GPGPUs), the continued increase in raw arithmetic throughput is constrained by the capabilities of the register file (single-cycle) and last-level cache (high bandwidth... » read more

← Older posts

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2026 SMG   |  Terms of Service  |  Privacy Policy